The carbon 100 split interstitial in SiC von Petrenko, T T, Petrenko, T L, Bratus’, V Ya

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Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis von Bletskan, D. I., Bratus’, V. Ya, Luk’yanchuk, A. R., Maslyuk, V. T., Parlag, O. A.

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A new spin one defect in cubic SiC von Bratus’, V.Ya, Melnik, R.S., Okulov, S.M., Rodionov, V.N., Shanina, B.D., Smoliy, M.I.

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Structural transformations and silicon nanocrystallite formation in SiOx films von Bratus’, V. Ya, Yukhimchuk, V. A., Berezhinsky, L. I., Valakh, M. Ya, Vorona, I. P., Indutnyi, I. Z., Petrenko, T. T., Shepeliavyi, P. E., Yanchuk, I. B.

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Dielectric resonator in rectangular ТЕ102 cavity for electron paramagnetic resonance study of thin films von Lemishko, S.V., Vorona, I.P., Yukhymchuk, V.O., Bratus', V.Ya, Okulov, S.M., Nosenko, V.V., Solopan, S.O., Belous, A.G.

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Dielectric resonator in rectangular ??(102) cavity for electron paramagnetic resonance study of thin films von Lemishko, S. V., Vorona, I. P., Yukhymchuk, V. O., Bratus, V. Ya, Okulov, S. M., Nosenko, Valentyna, Solopan, S. O., Belous, A. G.

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Behavior of Hydrogen During Crystallization of Thin Silicon Films Doped with Tin von Rudenko, R.M., Kras’ko, M.M., Voitovych, V.V., Kolosyuk, A.G., Povarchuk, V.Yu, Kraichynskyi, A.M., Yukhymchuck, V.O., Bratus’, V.Ya, Voitovych, M.V., Zaloilo, I.A.

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Calculation of spin-Hamiltonian constants for extended defects (VSi-VC)0 (Ky5) in silicon carbide polytype 3C-SiC von Shanina, B. D.

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Optical and electron paramagnetic resonance study of light-emitting Si+ ion implanted silicon dioxide layers von Valakh, M. Ya, Yukhimchuk, V. A., Bratus’, V. Ya, Konchits, A. A., Hemment, P. L. F., Komoda, T.

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EPR and Raman study of silicon layers obtained by gas detonation spraying von Klyui, N.I., Bratus, V.Ya, Temchenko, V.P., Lozinskii, V.B., Yukhymchuk, V.O., Han, Wei, Liu, Bingbing

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A negatively charged silicon vacancy in SiC: Spin polarization effects von Petrenko, T. T., Petrenko, T. L., Bratus’, V. Ya

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Thermal annealing and evolution of defects in neutron-irradiated cubic SiC von Bratus, V. Ya

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Positively charged carbon vacancy in three inequivalent lattice sites of 6H-SiC : Combined EPR and density functional theory study von BRATUS, V. Ya, PETRENKO, T. T, OKULOV, S. M, PETRENKO, T. L

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Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment von Dan’ko, V. A.

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Paramagnetic defects in silicon structures with nanocrystallites von Bratus', V. Ya

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The carbon split interstitial in SiC von PETRENKO, T. T, PETRENKO, T. L, BRATUS', V. Ya

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Positively charged carbon vacancy in 6H–SiC: EPR study von Bratus, V.Ya, Makeeva, I.N., Okulov, S.M., Petrenko, T.L., Petrenko, T.T., von Bardeleben, H.J.

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Vacancy-related defects in ion-beam and electron irradiated 6H–SiC von Bratus’, V.Ya, Petrenko, T.T, von Bardeleben, H.J, Kalinina, E.V, Hallén, A

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Symmetry, spin state and hyperfine parameters of vacancies in cubic SiC von Petrenko, T.T, Petrenko, T.L, Bratus’, V.Ya, Monge, J.L

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Calculation of hyperfine parameters of positively charged carbon vacancy in SiC von Petrenko, T.T., Petrenko, T.L., Bratus, V.Ya, Monge, J.L.

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