A new spin one defect in cubic SiC von Bratus’, V.Ya, Melnik, R.S., Okulov, S.M., Rodionov, V.N., Shanina, B.D., Smoliy, M.I.

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Dielectric resonator in rectangular ТЕ102 cavity for electron paramagnetic resonance study of thin films von Lemishko, S.V., Vorona, I.P., Yukhymchuk, V.O., Bratus', V.Ya, Okulov, S.M., Nosenko, V.V., Solopan, S.O., Belous, A.G.

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Calculation of spin-Hamiltonian constants for extended defects (VSi-VC)0 (Ky5) in silicon carbide polytype 3C-SiC von Shanina, B. D.

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EPR and Raman study of silicon layers obtained by gas detonation spraying von Klyui, N.I., Bratus, V.Ya, Temchenko, V.P., Lozinskii, V.B., Yukhymchuk, V.O., Han, Wei, Liu, Bingbing

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Behavior of Hydrogen During Crystallization of Thin Silicon Films Doped with Tin von Rudenko, R.M., Kras’ko, M.M., Voitovych, V.V., Kolosyuk, A.G., Povarchuk, V.Yu, Kraichynskyi, A.M., Yukhymchuck, V.O., Bratus’, V.Ya, Voitovych, M.V., Zaloilo, I.A.

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Positively charged carbon vacancy in 6H–SiC: EPR study von Bratus, V.Ya, Makeeva, I.N., Okulov, S.M., Petrenko, T.L., Petrenko, T.T., von Bardeleben, H.J.

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Vacancy-related defects in ion-beam and electron irradiated 6H–SiC von Bratus’, V.Ya, Petrenko, T.T, von Bardeleben, H.J, Kalinina, E.V, Hallén, A

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Symmetry, spin state and hyperfine parameters of vacancies in cubic SiC von Petrenko, T.T, Petrenko, T.L, Bratus’, V.Ya, Monge, J.L

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Calculation of hyperfine parameters of positively charged carbon vacancy in SiC von Petrenko, T.T., Petrenko, T.L., Bratus, V.Ya, Monge, J.L.

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EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC von Bratus, V.Ya, Makeeva, I.N., von Bardeleben, Hans Jürgen, Petrenko, T.T., Okulov, S.M., Petrenko, T.L.

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Positively charged carbon vacancy in three inequivalent lattice sites of 6H-SiC : Combined EPR and density functional theory study von BRATUS, V. Ya, PETRENKO, T. T, OKULOV, S. M, PETRENKO, T. L

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Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers von Bratus', V.Ya, Valakh, M.Ya, Vorona, I.P., Petrenko, T.T., Yukhimchuk, V.A., Hemment, P.L.F., Komoda, T.

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Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC von Nikitina, Irina P., Bratus, V.Ya, Kalinina, Evgenia V., Zubrilov, A.S., Kuznetsov, N.I., Shcheglov, M.P., Tregubova, Alla S.

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Stucture of the Pb Center: Endor Investigation von Bratus, V.Ya, von Bardeleben, Hans Jürgen, Vorona, I.P., Ishchenko, S.S., Okulov, S.M.

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Electrodipole Spin Transitions of the Neutral Manganese Acceptor Mn°Ga in Gallium Arsenide von Baran, N.P., Bratus, V.Ya, Markov, A.V., Semenov, Yu.G., Maksimenko, V.M.

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Electronic Structure of Boron in Silicon Carbide von Bratus, V.Ya, Maksimenko, V.M., Bugai, A.A., Klimov, A.A., Romanenko, V., Baran, N.P., Petrenko, T.L.

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