Development of a 100-W 200-GHz High Bandwidth mm-Wave Amplifier von Field, Mark, Kimura, Takuji, Atkinson, John, Gamzina, Diana, Luhmann, Neville C., Stockwell, Brad, Grant, Thomas J., Griffith, Zachary, Borwick, Robert, Hillman, Christopher, Brar, Berinder, Reed, Thomas, Rodwell, Mark, Shin, Young-Min, Barnett, Larry R., Baig, Anisullah, Popovic, Branko, Domier, Calvin, Barchfield, Robert, Zhao, Jinfeng, Higgins, John Aiden, Goren, Yehuda

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GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas von Shinohara, Keisuke, King, Casey, Carter, Andrew D., Regan, Eric J., Arias, Andrea, Bergman, Joshua, Urteaga, Miguel, Brar, Berinder

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Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286] von Rodwell, Mark J. W., Le, Minh, Brar, Berinder

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InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies von Rodwell, Mark J. W., Le, Minh, Brar, Berinder

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Herbert Kroemer: Electron Devices Legend von Asbeck, Peter, Brar, Berinder

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GaN HEMT-Based >1-GHz Speed Low-Side Gate Driver and Switch Monolithic Process for 865-MHz Power Conversion Applications von Mehrotra, Vivek, Arias, Andrea, Neft, Charles, Bergman, Joshua, Urteaga, Miguel, Brar, Berinder

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(Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity von Shinohara, Keisuke, King, Casey, Regan, Eric, Gomez, M P, Bergman, Joshua, Carter, Andrew, Arias, Andrea, Urteaga, Miguel, Brar, Berinder, Page, Ryan, Chaudhuri, Reet, Islam, Moudud, Xing, Huili Grace, Jena, Debdeep

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Ultra-High-Speed Low-Noise InP-HEMT Technology von Shinohara, K., Chen, P.S., Bergman, J., Kazemi, H., Brar, B., Watanabe, I., Matsui, T., Yamashita, Y., Endoh, A., Hikosaka, K., Mimura, T., Hiyamizu, S.

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InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies : Doubling the bandwidth of phosphide heterojunction bipolar integrated circuits, used for imaging,... von RODWELL, Mark J. W, LE, Minh, BRAR, Berinder

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Device Scale Heat Removal for High Power Density GaN Devices von Bhunia, A., Brackley, A., Chanh Nguyen, Brar, B.

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A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter von Broekaert, T.P.E., Brar, B., van der Wagt, J.P.A., Seabaugh, A.C., Morris, F.J., Moise, T.S., Beam, E.A., Frazier, G.A.

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An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier von Hacker, J.B., Bergman, J., Nagy, G., Sullivan, G., Kadow, C., Heng-Kuang Lin, Gossard, A.C., Rodwell, M., Brar, B.

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RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIERS AND ROUND GATE FOOT CORNERS von Shinohara, Keisuke, King, Casey, Regan, Dean, Brar, Berinder

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Magnetotransport in lateral periodic potentials formed by surface-layer-induced modulation in InAs-AlSb quantum wells von CHANH NGUYEN, BRAR, B, VIJAY JAYARAMAN, LORKE, A, KROEMER, H

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Wideband Low-Noise-Amplifier (LNA) with Lg = 50 nm InGaAs pHEMT and wideband RF chokes von Chen, P. S., Dae-Hyun Kim, Bergman, J., Hacker, J., Brar, B.

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Spiral growth of GaSb on (001) GaAs using molecular beam epitaxy von Brar, Berinder, Leonard, Devin

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Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors von Brar, B., Kroemer, H.

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Extremely High gm> 2.2 S/mm and fT> 550 GHz in 30-nm Enhancement-Mode InP-HEMTs with Pt/Mo/Ti/Pt/Au Buried Gate von Shinohara, K., Wonill Ha, Rodwell, M.J.W., Brar, B.

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Low-power W-band CPWG InAs/AlSb HEMT low-noise amplifier von Riemer, P.J., Buhrow, B.R., Hacker, J.B., Bergman, J., Brar, B., Gilbert, B.K., Daniel, E.S.

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Hole transport across the (Al,Ga)(As,Sb) barrier in InAs–(Al,Ga)(As,Sb) heterostructures von Brar, Berinder, Kroemer, Herbert

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