Old patient, bad outcome? Prospective evaluation of preoperative assessments as predictors of outcome and functional recovery after major urologic tumour surgery. First results of... von Kahlmeyer, A, Losensky, W, Brammertz, L, Taubert, H, Wach, S, Keck, B, Ritt, M, Gassmann, K.G, Wullich, B

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676 - Old patient, bad outcome? Prospective evaluation of preoperative assessments as predictors of outcome and functional recovery after major urologic tumour surgery. First resul... von Kahlmeyer, A., Losensky, W., Brammertz, L., Taubert, H., Wach, S., Keck, B., Ritt, M., Gassmann, K.G., Wullich, B.

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Physical routes for the synthesis of kesterite von Ratz, T, Brammertz, G, Caballero, R, León, M, Canulescu, S, Schou, J, Gütay, L, Pareek, D, Taskesen, T, Kim, D-H, Kang, J-K, Malerba, C, Redinger, A, Saucedo, E, Shin, B, Tampo, H, Timmo, K, Nguyen, N D, Vermang, B

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Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technology von Lopes, T. S., Teixeira, J. P., Curado, M. A., Ferreira, B. R., Oliveira, A. J. N., Cunha, J. M. V., Monteiro, M., Violas, A., Barbosa, J. R. S., Sousa, P. C., Çaha, I., Borme, J., Oliveira, K., Ring, J., Chen, W. C., Zhou, Y., Takei, K., Niemi, E., Deepak, F. L., Edoff, M., Brammertz, G., Fernandes, P. A., Vermang, B., Salomé, P. M. P.

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High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning von Loo, R., Wang, G., Souriau, L., Lin, J. C., Takeuchi, S., Brammertz, G., Caymax, M.

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Toward Mass Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenization von Neilson, Kathryn M., Hamtaei, Sarallah, Nassiri Nazif, Koosha, Carr, Joshua M., Rahimisheikh, Sepideh, Nitta, Frederick U., Brammertz, Guy, Blackburn, Jeffrey L., Hadermann, Joke, Saraswat, Krishna C., Reid, Obadiah G., Vermang, Bart, Daus, Alwin, Pop, Eric

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Toward Mass Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe 2 by Tungsten Selenization von Neilson, Kathryn M, Hamtaei, Sarallah, Nassiri Nazif, Koosha, Carr, Joshua M, Rahimisheikh, Sepideh, Nitta, Frederick U, Brammertz, Guy, Blackburn, Jeffrey L, Hadermann, Joke, Saraswat, Krishna C, Reid, Obadiah G, Vermang, Bart, Daus, Alwin, Pop, Eric

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Stability, reliability, upscaling and possible technological applications of kesterite solar cells von Larramona, G, Choné, C, Meissner, D, Ernits, K, Bras, P, Ren, Y, Martín-Salinas, R, Rodríguez-Villatoro, J L, Vermang, B, Brammertz, G

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Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates von LAMAGNA, L, FUSI, M, SPIGA, S, FANCIULLI, M, BRAMMERTZ, G, MERCKLING, C, MEURIS, M, MOLLE, A

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Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments von TRINH, H. D, BRAMMERTZ, G, IWAI, H, CHANG, E. Y, KUO, C. I, LU, C. Y, LIN, Y. C, NGUYEN, H. Q, WONG, Y. Y, TRAN, B. T, KAKUSHIMA, K

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Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposi... von Molle, A., Lamagna, L., Grazianetti, C., Brammertz, G., Merckling, C., Caymax, M., Spiga, S., Fanciulli, M.

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Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation von MERCKLING, C, CHANG, Y. C, MEURIS, M, HEYNS, M, CAYMAX, M, LU, C. Y, PENAUD, J, BRAMMERTZ, G, SCARROZZA, M, POURTOIS, G, KWO, J, HONG, M, DEKOSTER, J

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Cu(In,Ga)Se 2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technology von Lopes, T. S., Teixeira, J. P., Curado, M. A., Ferreira, B. R., Oliveira, A. J. N., Cunha, J. M. V., Monteiro, M., Violas, A., Barbosa, J. R. S., Sousa, P. C., Caha, I., Borme, J., Oliveira, K., Ring, J., Chen, Wei-Chao, Zhou, Y., Takei, K., Niemi, E., Deepak, F. L., Edoff, Marika, Brammertz, G., Fernandes, P. A., Vermang, B., Salome, P. M. P.

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Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS von Merckling, C., Penaud, J., Kohen, D., Bellenger, F., Alian, A., Brammertz, G., El-Kazzi, M., Houssa, M., Dekoster, J., Caymax, M., Meuris, M., Heyns, M.M.

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Interface and Border Traps in Ge-Based Gate Stacks von Nyns, Laura, Lin, Dennis, Brammertz, Guy, Bellenger, Florence, Shi, Xiaoping, Sioncke, Sonja, Van Elshocht, Sven, Caymax, Matty

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Transitivity of band offsets between semiconductor heterojunctions and oxide insulators von Afanas'ev, V. V., Chou, H.-Y., Houssa, M., Stesmans, A., Lamagna, L., Lamperti, A., Molle, A., Vincent, B., Brammertz, G.

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S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor von Sioncke, S., Lin, H. C., Nyns, L., Brammertz, G., Delabie, A., Conard, T., Franquet, A., Rip, J., Struyf, H., De Gendt, S., Müller, M., Beckhoff, B., Caymax, M.

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Reconstruction dependent reactivity of As-decapped In 0.53 Ga 0.47 As(001) surfaces and its influence on the electrical quality of the interface with Al 2 O 3 grown by atomic layer... von Molle, A., Lamagna, L., Grazianetti, C., Brammertz, G., Merckling, C., Caymax, M., Spiga, S., Fanciulli, M.

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Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface von FUSI, M, LAMAGNA, L, SPIGA, S, FANCIULLI, M, BRAMMERTZ, G, MERCKLING, C, MEURIS, M, MOLLE, A

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H2S molecular beam passivation of Ge(0 0 1) von MERCKLING, C, CHANG, Y. C, DEKOSTER, J, HEYNS, M. M, CAYMAX, M, LU, C. Y, PENAUD, J, EL-KAZZI, M, BELLENGER, F, BRAMMERTZ, G, HONG, M, KWO, J, MEURIS, M

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