Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor von Ugeda, Miguel M., Bradley, Aaron J., Shi, Su-Fei, da Jornada, Felipe H., Zhang, Yi, Qiu, Diana Y., Ruan, Wei, Mo, Sung-Kwan, Hussain, Zahid, Shen, Zhi-Xun, Wang, Feng, Louie, Steven G., Crommie, Michael F.

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Characterization of collective ground states in single-layer NbSe2 von Ugeda, Miguel M., Bradley, Aaron J., Zhang, Yi, Onishi, Seita, Chen, Yi, Ruan, Wei, Ojeda-Aristizabal, Claudia, Ryu, Hyejin, Edmonds, Mark T., Tsai, Hsin-Zon, Riss, Alexander, Mo, Sung-Kwan, Lee, Dunghai, Zettl, Alex, Hussain, Zahid, Shen, Zhi-Xun, Crommie, Michael F.

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Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films von Zhang, Yi, Ugeda, Miguel M, Jin, Chenhao, Shi, Su-Fei, Bradley, Aaron J, Martín-Recio, Ana, Ryu, Hyejin, Kim, Jonghwan, Tang, Shujie, Kim, Yeongkwan, Zhou, Bo, Hwang, Choongyu, Chen, Yulin, Wang, Feng, Crommie, Michael F, Hussain, Zahid, Shen, Zhi-Xun, Mo, Sung-Kwan

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Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures von Bradley, Aaron J, M. Ugeda, Miguel, da Jornada, Felipe H, Qiu, Diana Y, Ruan, Wei, Zhang, Yi, Wickenburg, Sebastian, Riss, Alexander, Lu, Jiong, Mo, Sung-Kwan, Hussain, Zahid, Shen, Zhi-Xun, Louie, Steven G, Crommie, Michael F

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Imaging single-molecule reaction intermediates stabilized by surface dissipation and entropy von Riss, Alexander, Paz, Alejandro Pérez, Wickenburg, Sebastian, Tsai, Hsin-Zon, De Oteyza, Dimas G., Bradley, Aaron J., Ugeda, Miguel M., Gorman, Patrick, Jung, Han Sae, Crommie, Michael F., Rubio, Angel, Fischer, Felix R.

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Local Electronic and Chemical Structure of Oligo-acetylene Derivatives Formed Through Radical Cyclizations at a Surface von Riss, Alexander, Wickenburg, Sebastian, Gorman, Patrick, Tan, Liang Z, Tsai, Hsin-Zon, de Oteyza, Dimas G, Chen, Yen-Chia, Bradley, Aaron J, Ugeda, Miguel M, Etkin, Grisha, Louie, Steven G, Fischer, Felix R, Crommie, Michael F

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Imaging and Tuning Molecular Levels at the Surface of a Gated Graphene Device von Riss, Alexander, Wickenburg, Sebastian, Tan, Liang Z, Tsai, Hsin-Zon, Kim, Youngkyou, Lu, Jiong, Bradley, Aaron J, Ugeda, Miguel M, Meaker, Kacey L, Watanabe, Kenji, Taniguchi, Takashi, Zettl, Alex, Fischer, Felix R, Louie, Steven G, Crommie, Michael F

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Covalent Functionalization of GaP(110) Surfaces via a Staudinger-Type Reaction with Perfluorophenyl Azide von M. Ugeda, Miguel, Bradley, Aaron J, Rodrigo, Lucía, Yu, Min, Liu, Wenjun, Doak, Peter, Riss, Alexander, Neaton, Jeffrey B, Tilley, T. Don, Pérez, Rubén, Crommie, Michael F

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Adsorption and Stability of π‑Bonded Ethylene on GaP(110) von Ugeda, Miguel M, Yu, Min, Bradley, Aaron J, Doak, Peter, Liu, Wenjun, Moore, Gary F, Sharp, Ian D, Tilley, T. D, Neaton, Jeffrey B, Crommie, Michael F

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities von Jung, Han Sae, Tsai, Hsin-Zon, Wong, Dillon, Germany, Chad, Kahn, Salman, Kim, Youngkyou, Aikawa, Andrew S, Desai, Dhruv K, Rodgers, Griffin F, Bradley, Aaron J, Velasco, Jr, Jairo, Watanabe, Kenji, Taniguchi, Takashi, Wang, Feng, Zettl, Alex, Crommie, Michael F

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Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe 2 Nanostructures von Bradley, Aaron J., M. Ugeda, Miguel, da Jornada, Felipe H., Qiu, Diana Y., Ruan, Wei, Zhang, Yi, Wickenburg, Sebastian, Riss, Alexander, Lu, Jiong, Mo, Sung-Kwan, Hussain, Zahid, Shen, Zhi-Xun, Louie, Steven G., Crommie, Michael F.

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Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe sub(2) Nanostructures von Bradley, Aaron J, Ugeda, Miguel M, da Jornada, Felipe H, Qiu, Diana Y, Ruan, Wei, Zhang, Yi, Wickenburg, Sebastian, Riss, Alexander, Lu, Jiong, Mo, Sung-Kwan, Hussain, Zahid, Shen, Zhi-Xun, Louie, Steven G, Crommie, Michael F

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Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe sub(2) Thin Films von Zhang, Yi, Ugeda, Miguel M, Jin, Chenhao, Shi, Su-Fei, Bradley, Aaron J, Martin-Recio, Ana, Ryu, Hyejin, Kim, Jonghwan, Tang, Shujie, Kim, Yeongkwan, Zhou, Bo, Hwang, Choongyu, Chen, Yulin, Wang, Feng, Crommie, Michael F, Hussain, Zahid, Shen, Zhi-Xun, Mo, Sung-Kwan

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Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe 2 Thin Films von Zhang, Yi, Ugeda, Miguel M., Jin, Chenhao, Shi, Su-Fei, Bradley, Aaron J., Martín-Recio, Ana, Ryu, Hyejin, Kim, Jonghwan, Tang, Shujie, Kim, Yeongkwan, Zhou, Bo, Hwang, Choongyu, Chen, Yulin, Wang, Feng, Crommie, Michael F., Hussain, Zahid, Shen, Zhi-Xun, Mo, Sung-Kwan

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Characterization of collective ground states in single-layer NbSe sub(2) von Ugeda, Miguel M, Bradley, Aaron J, Zhang, Yi, Onishi, Seita, Chen, Yi, Ruan, Wei, Ojeda-Aristizabal, Claudia, Ryu, Hyejin, Edmonds, Mark T, Tsai, Hsin-Zon, Riss, Alexander, Mo, Sung-Kwan, Lee, Dunghai, Zettl, Alex, Hussain, Zahid, Shen, Zhi-Xun, Crommie, Michael F

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities von Jung, Han Sae, Tsai, Hsin-Zon, Wong, Dillon, Germany, Chad, Kahn, Salman, Kim, Youngkyou, Aikawa, Andrew S., Desai, Dhruv K., Rodgers, Griffin F., Bradley, Aaron J., Velasco Jr, Jairo, Watanabe, Kenji, Taniguchi, Takashi, Wang, Feng, Zettl, Alex, Crommie, Michael F.

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Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films von Zhang, Yi, Ugeda, Miguel M, Jin, Chenhao, Su-Fei, Shi, Bradley, Aaron J, Martin-Recio, Ana, Ryu, Hyejin, Kim, Jonghwan, Tang, Shujie, Kim, Yeongkwan, Zhou, Bo, Hwang, Choongyu, Chen, Yulin, Wang, Feng, Crommie, Michael F, Hussain, Zahid, Shen, Zhi-Xun, Sung-Kwan, Mo

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Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures von Bradley, Aaron J, Ugeda, Miguel M, da Jornada, Felipe H, Qiu, Diana Y, Ruan, Wei, Zhang, Yi, Wickenburg, Sebastian, Riss, Alexander, Lu, Jiong, Sung-Kwan, Mo, Hussain, Zahid, Shen, Zhi-Xun, Louie, Steven G, Crommie, Michael F

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Characterization of collective ground states in single-layer NbSe2 von Ugeda, Miguel M, Bradley, Aaron J, Zhang, Yi, Onishi, Seita, Chen, Yi, Ruan, Wei, Ojeda-Aristizabal, Claudia, Ryu, Hyejin, Edmonds, Mark T, Tsai, Hsin-Zon, Riss, Alexander, Sung-Kwan, Mo, Lee, Dunghai, Zettl, Alex, Hussain, Zahid, Shen, Zhi-Xun, Crommie, Michael F

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Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor von Ugeda, Miguel M, Bradley, Aaron J, Su-Fei, Shi, da Jornada, Felipe H, Zhang, Yi, Qiu, Diana Y, Sung-Kwan, Mo, Hussain, Zahid, Shen, Zhi-Xun, Wang, Feng, Louie, Steven G, Crommie, Michael F

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