Voltage-margin limiting mechanisms of AlScN-based HEMTs von Döring, P., Krause, S., Waltereit, P., Brückner, P., Leone, S., Streicher, I., Mikulla, M., Quay, R.

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Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies von Neininger, P., Mikulla, M., Döring, P., Dammann, M., Thome, F., Krause, S., Schwantuschke, D., Brückner, P., Friesicke, C., Quay, R.

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Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks von HERTKORN, J, LIPSKI, F, BRÜCKNER, P, WUNDERER, T, THAPA, S. B, SCHOLZ, F, CHUVILIN, A, KAISER, U, BEER, M, ZWECK, J

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Optimization of nucleation and buffer layer growth for improved GaN quality von Hertkorn, J., Brückner, P., Thapa, S.B., Wunderer, T., Scholz, F., Feneberg, M., Thonke, K., Sauer, R., Beer, M., Zweck, J.

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Piezoelectric fields in GaInN∕GaN quantum wells on different crystal facets von Feneberg, M., Lipski, F., Sauer, R., Thonke, K., Wunderer, T., Neubert, B., Brückner, P., Scholz, F.

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GaN HEMTs and MMICs for space applications von Waltereit, P, Bronner, W, Quay, R, Dammann, M, Cäsar, M, Müller, S, Reiner, R, Brückner, P, Kiefer, R, van Raay, F, Kühn, J, Musser, M, Haupt, C, Mikulla, M, Ambacher, O

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Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE von Richter, E., Hennig, Ch, Weyers, M., Habel, F., Tsay, J.-D., Liu, W.-Y., Brückner, P., Scholz, F., Makarov, Yu, Segal, A., Kaeppeler, J.

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Polarized light emission from semipolar GaInN quantum wells on {11¯01} GaN facets von Feneberg, M., Lipski, F., Sauer, R., Thonke, K., Brückner, P., Neubert, B., Wunderer, T., Scholz, F.

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The role of reactive oxygen species in homeostasis and degradation of cartilage von Henrotin, Y.E, Bruckner, P, Pujol, J.-P.L

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Semipolar GaN/GaInN LEDs with more than 1 mW optical output power von Neubert, B., Wunderer, T., Brückner, P., Scholz, F., Feneberg, M., Lipski, F., Schirra, M., Thonke, K.

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Thiol-ene modification of electrospun polybutadiene fibers crosslinked by UV irradiation von Thielke, Michael W., Bruckner, Eric P., Wong, Doris L., Theato, Patrick

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Intrafacet migration effects in InGaN∕GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction von Bonanno, P. L., O’Malley, S. M., Sirenko, A. A., Kazimirov, A., Cai, Z.-H., Wunderer, T., Brückner, P., Scholz, F.

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Microbeam high angular resolution x-ray diffraction in InGaN∕GaN selective-area-grown ridge structures von Sirenko, A. A., Kazimirov, A., Cornaby, S., Bilderback, D. H., Neubert, B., Brückner, P., Scholz, F., Shneidman, V., Ougazzaden, A.

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Superstructured Biomaterials Formed by Exchange Dynamics and Host–Guest Interactions in Supramolecular Polymers von Edelbrock, Alexandra N., Clemons, Tristan D., Chin, Stacey M., Roan, Joshua J. W., Bruckner, Eric P., Álvarez, Zaida, Edelbrock, Jack F., Wek, Kristen S., Stupp, Samuel I.

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Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited masks von Hertkorn, J., Lipski, F., Brückner, P., Wunderer, T., Thapa, S.B., Scholz, F., Chuvilin, A., Kaiser, U., Beer, M., Zweck, J.

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Designing supramolecular polymers with nucleation and growth processes von Bruckner, Eric P, Stupp, Samuel I

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Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology von Dammann, M., Baeumler, M., Brückner, P., Kemmer, T., Konstanzer, H., Graff, A., Simon-Najasek, M., Quay, R.

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Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications von Dammann, M., Baeumler, M., Polyakov, V., Brückner, P., Konstanzer, H., Quay, R., Mikulla, M., Graff, A., Simon-Najasek, M.

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X-ray diffraction studies of selective area grown InGaN/GaN multiple quantum wells on multi-facet GaN ridges von O'Malley, S. M., Bonanno, P. L., Wunderer, T., Brückner, P., Neubert, B., Scholz, F., Kazimirov, A., Sirenko, A. A.

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Reliability of 100nm AlGaN/GaN HEMTs for mm-wave applications von Dammann, M., Baeumler, M., Polyakov, V., Brückner, P., Konstanzer, H., Quay, R., Mikulla, M., Graff, A., Simon-Najasek, M.

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