Doubly hybrid density functional xDH-PBE0 from a parameter-free global hybrid model PBE0 von Zhang, Igor Ying, Su, Neil Qiang, Brémond, Éric A. G., Adamo, Carlo, Xu, Xin

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Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy von Wang, L., Chauveau, J. M., Brenier, R., Sallet, V., Jomard, F., Sartel, C., Brémond, G.

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Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy von Wang, L., Laurent, J., Chauveau, J. M., Sallet, V., Jomard, F., Brémond, G.

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Response to “Comment on ‘Doubly hybrid density functional xDH-PBE0 from a parameter-free global hybrid model PBE0”’ [J. Chem. Phys. 143, 187101 (2015)] von Zhang, Igor Ying, Su, Neil Qiang, Brémond, Éric A. G., Adamo, Carlo, Xu, Xin

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Geometrically faithful homeomorphisms between the electron density and the bare nuclear potential von Popelier, Paul L. A., Brémond, Éric A. G.

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Silicon nanostructures for solar cell applications von Gourbilleau, F., Dufour, C., Rezgui, B., Brémond, G.

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Charge photo-carrier transport from silicon nanocrystals embedded in SiO2-based multilayer structures von Dridi Rezgui, B., Gourbilleau, F., Maestre, D., Palais, O., Sibai, A., Lemiti, M., Brémond, G.

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Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(0 0 1) von Ajjel, R, Baira, M, Gassoumi, M, Maaref, H, Salem, B, Brémond, G, Gendry, M

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Electrical characterisation of local electronic properties of self-assembled semiconductor nanostructures using AFM von Decossas, S, Marchand, J.J, Brémond, G

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Effective generation lifetime depth profile in InAs quantum dots grown on InAlAs/InP(0 0 1) von Ajjel, R, Baira, M, Maaref, H, Salem, B, Brémond, G, Gendry, M

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Influence of the chemical properties of the substrate on silicon quantum dot nucleation von MAZEN, F, BARON, T, BREMOND, G, BUFFET, N, ROCHAT, N, MUR, P, SEMERIA, M. N

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Electrical and optical characterisation of vanadium in 4H and 6H–SiC von Lauer, V, Brémond, G, Souifi, A, Guillot, G, Chourou, K, Anikin, M, Madar, R, Clerjaud, B, Naud, C

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Formation Mechanisms of ZnO Nanowires: The Crucial Role of Crystal Orientation and Polarity von Guillemin, Sophie, Rapenne, Laetitia, Roussel, Hervé, Sarigiannidou, Eirini, Brémond, Georges, Consonni, Vincent

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Charge photo-carrier transport from silicon nanocrystals embedded in SiO 2 -based multilayer structures von Dridi Rezgui, B., Gourbilleau, F., Maestre, D., Palais, Olivier, Sibai, A., Lemiti, M., Brémond, G.

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Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) von Brault, J., Gendry, M., Grenet, G., Hollinger, G., Olivares, J., Salem, B., Benyattou, T., Bremond, G.

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Strain dependence of indirect band gap for strained silicon on insulator wafers von Munguía, J., Bremond, G., Bluet, J. M., Hartmann, J. M., Mermoux, M.

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Electric measurements by AFM on silicon nanocrystals von Decossas, S, Mazen, F, Baron, T, Souifi, A, Brémond, G

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Influence of deep levels on CdZnTe nuclear detectors von Zerrai, A, Cherkaoui, K, Marrakchi, G, Brémond, G, Fougères, P, Hage-Ali, M, Koebel, J.M, Siffert, P

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Influence of carrier and doping gases on silicon quantum dots nucleation von Mazen, F, Baron, T, Hartmann, J.M, Brémond, G, Séméria, M.N

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Temperature dependence of the indirect bandgap in ultrathin strained silicon on insulator layer von Munguía, J., Bluet, J.-M., Marty, O., Bremond, G., Mermoux, M., Rouchon, D.

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