Effect of thermal annealing on electrical and structural properties of Ni/Au/n-GaN Schottky contacts von Akkaya, A., Esmer, L., Kantar, B. Boyarbay, Çetin, H., Ayyıldız, E.

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A Study on the Electronic Properties of SiOxNy/p-Si Interface von Akkaya, A., Boyarbay, B., Çetin, H., Yıldızlı, K., Ayyıldız, E.

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Correlation between barrier heights and ideality factors of H-terminated Sn/ p-Si(1 0 0) Schottky barrier diodes von Boyarbay, B., Çetin, H., Kaya, M., Ayyildiz, E.

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Electrical characterization of the polyaniline/p-silicon and polyaniline titanium dioxide tetradecyltrimethylammonium bromide /p-silicon heterojunctions von Boyarbay, B., Çetin, H., Uygun, A., Ayyildiz, E.

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Electrical characterization of heterojunction between polyaniline titanium dioxide tetradecyltrimethylammonium bromide and n-silicon von Çetin, H., Boyarbay, B., Akkaya, A., Uygun, A., Ayyildiz, E.

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Electrical characterization and fabrication of organic/inorganic semiconductor heterojunctions von Boyarbay, B., Çetin, H., Uygun, A., Ayyildiz, E.

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Temperature dependence of the current–voltage characteristics of Sn/PANI/p-Si/Al heterojunctions von Kaya, M, Çetin, H, Boyarbay, B, Gök, A, Ayyildiz, E

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