Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP von Ferrandis, Philippe, Billaud, Mathilde, Duvernay, Julien, Martin, Mickael, Arnoult, Alexandre, Grampeix, Helen, Cassé, Mikael, Boutry, Hervé, Baron, Thierry, Vinet, Maud, Reimbold, Gilles

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Local lateral integration of 16-nm thick Ge nanowires on silicon on insulator substrates von Khazaka, Rami, Bogumilowicz, Yann, Papon, Anne-Marie, Dansas, Hugo, Boutry, Hervé, Chalupa, Zdenek, Lapras, Valérie, Prévitali, Bernard, Maitrejean, Sylvain

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Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges von Khazaka, Rami, Bogumilowicz, Yann, Rouchon, Denis, Boutry, Hervé, Chalupa, Zdenek, Lapras, Valérie, Prévitali, Bernard, Chevalier, Nicolas, Papon, Anne Marie, David, Sylvain, Maitrejean, Sylvain

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System-on-Wafer: 2-D and 3-D Technologies for Heterogeneous Systems von Souriau, Jean-Charles, Sillon, N, Brun, J, Boutry, H, Hilt, T, Henry, D, Poupon, G

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Electrical properties of metal/Al 2 O 3 /In 0.53 Ga 0.47 As capacitors grown on InP von Ferrandis, Philippe, Billaud, Mathilde, Duvernay, Julien, Martin, Mickaël, Arnoult, Alexandre, Grampeix, Helen, Casse, Mikael, Boutry, Hervé, Baron, Thierry, Vinet, Maud, Reimbold, Gilles

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DC/DC converter 3D assembly for autonomous sensor nodes von Hilt, Thierry, Boutry, Hervé, Franiatte, Rémi, Rothan, Frédéric, Sillon, Nicolas, Stam, Frank, Mathewson, Alan, Ningning Wang, O'Mathuna, Cian, Rodgers, Kenneth

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Method of producing an element of a microelectronic device von Boutry, Herve, Khazaka, Rami, Bogumilowicz, Yann

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METHOD OF PRODUCING AN ELEMENT OF A MICROELECTRONIC DEVICE von Boutry, Herve, KHAZAKA, Rami, Bogumilowicz, Yann

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HfO2/Al2O3/InGaAs MOSCAP structures and InGaAs plasma nitridation elaborated in a 300mm pilot line von Billaud, M, Duvernay, J, Grampeix, H, Pelissier, B, Martin, M, David, S, Vallée., C, Chalupa, Z, Boutry, H, Baron, T., Cassé., M, Ernst, T, Vinet, M, Reimbold, G, Faynot, O

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HfO 2 /Al 2 O 3 /InGaAs MOSCAP Structures and InGaAs Plasma Nitridation Elaborated in a 300mm Pilot Line von Billaud, Mathilde, Duvernay, Julien, Grampeix, Helen, Pelissier, Bernard, Martin, Mickael, David, Sylvain, Vallée, Christophe, Chalupa, Zdenek, Boutry, Hervé, Baron, Thierry, Cassé, Mickaël, Ernst, Thomas, Vinet, Maud, Reimbold, Gilles, Faynot, Oliver

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Analysis of nickel cylindrical bump insertion into aluminium thin film for flip chip applications von Diop, M.D., Mandrillon, V., Boutry, H., Inal, K., Fortunier, R.

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INTEGRATED CIRCUIT WITH STACKED CHIPS AND CAPACITIVE CONNECTION von BELOT, Didier, DORE, Jean-Baptiste, VALORGE, Olivier, BOUTRY, Hervé

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3D via belt technology von Brun, J., Boutry, H., Franiatte, R., Hilt, T., Sillon, N.

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PROCEDE DE REALISATION D'UN ELEMENT D'UN DISPOSITIF MICROELECTRONIQUE von BOGUMILOWICZ, YANN, KHAZAKA, RAMI, BOUTRY, HERVE

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Failure analysis of a 2.5D stacking using μinsert technology von Nowodzinski, Antoine, Mandrillon, Vincent, Bouchu, David, Franiatte, Remi, Boutry, Herve, Bloch, Didier, Rousseau, Karine, Lionel, Chevalier

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Reliability tests on micro-insert die bonding technology von Nowodzinski, A., Boutry, H., Franiatte, R., Mandrillon, V., Anciant, R., Verrun, S., Simon, G.

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Monte Carlo simulation of electron transport in narrow gap heterostructures von Thobel, Jean-Luc, Bonno, Olivier, Dessenne, François, Boutry, Hervé

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Method for manufacturing a microelectronic device and a microelectronic device thus manufactured von MOREAU STEPHANE, HILT THIERRY, BOUTRY HERVE, FRANIATTE REMY

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Dispositif microélectronique et son procédé de réalisation von BOUTRY, Hervé, DUBARRY, Christophe, DIVAY, Alexis

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III-V HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD FOR PRODUCING SAME von BOUTRY, Hervé, DUBARRY, Christophe, DIVAY, Alexis

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