Entanglement over global distances via quantum repeaters with satellite links von Boone, K., Bourgoin, J.-P., Meyer-Scott, E., Heshami, K., Jennewein, T., Simon, C.

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Experimental three-photon quantum nonlocality under strict locality conditions von Erven, C., Meyer-Scott, E., Fisher, K., Lavoie, J., Higgins, B. L., Yan, Z., Pugh, C. J., Bourgoin, J.-P., Prevedel, R., Shalm, L. K., Richards, L., Gigov, N., Laflamme, R., Weihs, G., Jennewein, T., Resch, K. J.

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A comprehensive design and performance analysis of low Earth orbit satellite quantum communication von Bourgoin, J-P, Meyer-Scott, E, Higgins, B L, Helou, B, Erven, C, Hübel, H, Kumar, B, Hudson, D, D'Souza, I, Girard, R, Laflamme, R, Jennewein, T

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80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes von Nougaret, L., Happy, H., Dambrine, G., Derycke, V., Bourgoin, J. -P., Green, A. A., Hersam, M. C.

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Studying free-space transmission statistics and improving free-space quantum key distribution in the turbulent atmosphere von Erven, C, Heim, B, Meyer-Scott, E, Bourgoin, J P, Laflamme, R, Weihs, G, Jennewein, T

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Optoelectronic Switch and Memory Devices Based on Polymer-Functionalized Carbon Nanotube Transistors von Borghetti, J., Derycke, V., Lenfant, S., Chenevier, P., Filoramo, A., Goffman, M., Vuillaume, D., Bourgoin, J.-P.

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Gigahertz characterization of a single carbon nanotube von Nougaret, L., Dambrine, G., Lepilliet, S., Happy, H., Chimot, N., Derycke, V., Bourgoin, J.-P.

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Nanotube devices based crossbar architecture: toward neuromorphic computing von Zhao, W S, Agnus, G, Derycke, V, Filoramo, A, Bourgoin, J-P, Gamrat, C

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Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design von Fregonese, Sebastien, Cazin d'Honincthun, Hugues, Goguet, Johnny, Maneux, Cristell, Zimmer, Thomas, Bourgoin, Jean-Philippe, Dollfus, Philippe, Galdin-Retailleau, Sylvie

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Electron Transport through Rectifying Self-Assembled Monolayer Diodes on Silicon:  Fermi-Level Pinning at the Molecule−Metal Interface von Lenfant, S, Guerin, D, Tran Van, F, Chevrot, C, Palacin, S, Bourgoin, J. P, Bouloussa, O, Rondelez, F, Vuillaume, D

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Self-assembled switches based on electroactuated multiwalled nanotubes von Dujardin, E., Derycke, V., Goffman, M. F., Lefèvre, R., Bourgoin, J. P.

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Evidence of the key role of metal-molecule bonding in metal-molecule-metal transport experiments von Patrone, L, Palacin, S, Charlier, J, Armand, F, Bourgoin, J P, Tang, H, Gauthier, S

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Toward full carbon interconnects: High conductivity of individual carbon nanotube to carbon nanotube regrowth junctions von Tuukkanen, S., Streiff, S., Chenevier, P., Pinault, M., Jeong, H.-J., Enouz-Vedrenne, S., Cojocaru, C. S., Pribat, D., Bourgoin, J.-P.

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Scaling law in carbon nanotube electromechanical devices von LEFEVRE, R, GOFFMAN, M. F, DERYCKE, V, MIKO, C, FORRO, L, BOURGOIN, J. P, HESTO, P

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Fabrication and characterization of sub-3 nm gaps for single-cluster and single-molecule experiments von Lambert, M F, Goffman, M F, Bourgoin, J P, Hesto, P

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Controlled deposition of carbon nanotubes on a patterned substrate von Choi, K.H., Bourgoin, J.P., Auvray, S., Esteve, D., Duesberg, G.S., Roth, S., Burghard, M.

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Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement von Bethoux, J.-M., Happy, H., Dambrine, G., Derycke, V., Goffman, M., Bourgoin, J.-P.

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Active properties of carbon nanotube field-effect transistors deduced from S parameters measurements von Bethoux, J.-M., Happy, H., Siligaris, A., Dambrine, G., Borghetti, J., Derycke, V., Bourgoin, J.-P.

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Intrinsic current gain cutoff frequency of 30 GHz with carbon nanotube transistors von Le Louarn, A., Kapche, F., Bethoux, J.-M., Happy, H., Dambrine, G., Derycke, V., Chenevier, P., Izard, N., Goffman, M. F., Bourgoin, J.-P.

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Gigahertz frequency flexible carbon nanotube transistors von Chimot, N., Derycke, V., Goffman, M. F., Bourgoin, J. P., Happy, H., Dambrine, G.

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