Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2>or=V/sub g/<or=V/sub d/) during hot-carrier stressing of n-MOS transistors von Doyle, B., Bourcerie, M., Marchetaux, J.-C., Boudou, A.

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The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors von Doyle, B.S., Bourcerie, M., Bergonzoni, C., Benecchi, R., Bravis, A., Mistry, K.R., Boudou, A.

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On the analysis and synthesis of coloured Petri nets von Morel, J.-Y., Bourcerie, M.

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Generating independent chaotic attractors by chaos anticontrol in nonlinear circuits von Morel, Cristina, Bourcerie, Marc, Chapeau-Blondeau, François

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Effective management of large networks through the Petri nets-discrete event simulation dualism von Vlad, R.C., Morel, J.-Y., Bourcerie, M., Mostakhdemin-Hosseini, A.

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Relaxable damage in hot-carrier stressing of n-MOS transistors-oxide traps in the near interfacial region of the gate oxide von Bourcerie, M., Doyle, B.S., Marchetaux, J.-C., Soret, J.-C., Boudou, A.

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Optical spectroscopy and field-enhanced emission of an oxide trap induced by hot-hole injection in a silicon metal-oxide-semiconductor field-effect transistor von BOURCERIE, M, MARCHETAUX, J. C, BOUDOU, A, VUILLAUME, D

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Application of the floating-gate technique to the study of the n-MOSFET gate current evolution due to hot-carrier aging von Marchetaux, J.-C., Bourcerie, M., Boudou, A., Vuillaume, D.

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Salon des Cent. Mai-juin 1894 (épreuve avant la lettre en couleurs) von Noury, Gaston (1866-?)

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Salon des Cent. Mai-juin 1894 (épreuve avant la lettre) von Noury, Gaston (1866-?)

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Salon des Cent. Mai-juin 1894 von Noury, Gaston (1866-?)

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Relaxation effects in NMOS transistors after hot-carrier stressing von Doyle, B.S., Bourcerie, M., Marchetaux, J.-C., Boudou, A.

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Extension of chaos anticontrol applied to the improvement of switch-mode power supply electromagnetic compatibility von Morel, C., Bourcerie, M., Chapeau-Blondeau, F.

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The effect of substrate bias on hot-carrier damage in NMOS devices von Doyle, B.S., Marchetaux, J., Bourcerie, M., Boudou, A.

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Dynamic channel hot-carrier degradation of NMOS transistors by enhanced electron-hole injection into the oxide von Doyle, B.S., Bourcerie, M., Marchetaux, J.-C., Boudou, A.

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Hot-carrier stressing damage in wide and narrow LDD NMOS transistors von Bourcerie, M., Doyle, B.S., Marchetaux, J.-C., Boudou, A., Mingam, H.

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Research strategy as the main catalyst for organizational development von Vlad, R.C., Morel, J.-Y., Bourcerie, M.

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Complex sequencing by methods of interpolation in Z/pZ colored Petri nets von Marteau, S., Bourcerie, M.

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Algebraically structured colored Petri nets to model sequential processes von Bourcerie, M., Morel, J.-Y.

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Z/pZ Petri nets model with application to an electroplating line von Mabed, M., Bousseau, F., Bourcerie, M.

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