Fine characterization of MBE-grown super-multiperiod AlGaAs/GaAs superlattices designed for THz radiation sources von Goray, L.I., Pirogov, E.V., Sobolev, M.S., Dashkov, A.S., Borisov, M.M., Yakunin, S.N., Vasiliev, A.L., Yunin, P.A., Bouravleuv, A.D.

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Model of a GaAs Quantum Dot Embedded in a Polymorph AlGaAs Nanowire von Barettin, D., Platonov, A. V., Pecchia, A., Kats, V. N., Cirlin, G. E., Soshnikov, I. P., Bouravleuv, A. D., Besombes, L., Mariette, H., Auf der Maur, Matthias, Carlo, A. D.

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Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon von Cirlin, G. E., Shtrom, I. V., Reznik, R. R., Samsonenko, Yu. B., Khrebtov, A. I., Bouravleuv, A. D., Soshnikov, I. P.

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Optical study of GaAs quantum dots embedded into AlGaAs nanowires von Kats, V N, Kochereshko, V P, Platonov, A V, Chizhova, T V, Cirlin, G E, Bouravleuv, A D, Samsonenko, Yu B, Soshnikov, I P, Ubyivovk, E V, Bleuse, J, Mariette, H

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The Features of GaAs Nanowire SEM Images von Soshnikov, I. P., Kotlyar, K. P., Bert, N. A., Kirilenko, D. A., Bouravleuv, A. D., Cirlin, G. E.

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Optically excited THz generation from ordered arrays of GaAs nanowires von Trukhin, V.N., Bouravleuv, A.D., Mustafin, I.A., Kakko, J.P., Lipsanen, H.

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Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires von Trukhin, V. N., Bouravleuv, A. D., Mustafin, I. A., Cirlin, G. E., Kakko, J. P., Lipsanen, H.

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GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases von Shtrom, I. V., Sibirev, N. V., Ubiivovk, E. V., Samsonenko, Yu. B., Khrebtov, A. I., Reznik, R. R., Bouravleuv, A. D., Cirlin, G. E.

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Polarization of the photoluminescence of quantum dots incorporated into quantum wires von Platonov, A. V., Kochereshko, V. P., Kats, V. N., Cirlin, G. E., Bouravleuv, A. D., Avdoshina, D. V., Delga, A., Besombes, L., Mariette, H.

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Resonant features of the terahertz generation in semiconductor nanowires von Trukhin, V. N., Bouravleuv, A. D., Mustafin, I. A., Cirlin, G. E., Kuritsyn, D. I., Rumyantsev, V. V., Morosov, S. V., Kakko, J. P., Huhtio, T., Lipsanen, H.

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Surface passivation of GaAs nanowires by the atomic layer deposition of AlN von Shtrom, I. V., Bouravleuv, A. D., Samsonenko, Yu. B., Khrebtov, A. I., Soshnikov, I. P., Reznik, R. R., Cirlin, G. E., Dhaka, V., Perros, A., Lipsanen, H.

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Influence of substrate temperature on the shape of GaAs nanowires grown by Au-assisted MOVPE von Bouravleuv, A.D., Sibirev, N.V., Statkute, G., Cirlin, G.E., Lipsanen, H., Dubrovskii, V.G.

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New method of determining the young’s Modulus of (Ga,Mn)As nanowhiskers with a scanning electron microscope von Bouravleuv, A. D., Sibirev, N. V., Beznasyuk, D. V., Lebedeva, N., Novikov, S., Lipsanen, H., Cirlin, G. E.

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Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals von Sibirev, N. V., Bouravleuv, A. D., Trushkov, Yu. M., Beznasyuk, D. V., Samsonenko, Yu. B., Cirlin, G. E.

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(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties von Bouravleuv, A. D., Nevedomskii, V. N., Ubyivovk, E. V., Sapega, V. F., Khrebtov, A. I., Samsonenko, Yu. B., Cirlin, G. E., Ustinov, V. M.

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Study of the electrical properties of individual (Ga,Mn)As nanowires von Bouravleuv, A. D., Sibirev, N. V., Gilstein, E. P., Brunkov, P. N., Mukhin, I. S., Tchernycheva, M., Khrebtov, A. I., Samsonenko, Yu. B., Cirlin, G. E.

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Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces von Samsonenko, Yu. B., Cirlin, G. E., Khrebtov, A. I., Bouravleuv, A. D., Polyakov, N. K., Ulin, V. P., Dubrovskii, V. G., Werner, P.

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Computer simulation of the structure and raman spectra of GaAs polytypes von Smirnov, M. B., Koshkin, A. O., Karpov, S. V., Novikov, B. V., Smirnov, A. N., Shtrohm, I. V., Cirlin, G. E., Bouravleuv, A. D., Samsonenko, Yu. B.

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Formation of (Ga,Mn)As nanowires and study of their magnetic properties von Bouravleuv, A. D., Cirlin, G. E., Romanov, V. V., Bagraev, N. T., Brilinskaya, E. S., Lebedeva, N. A., Novikov, S. V., Lipsanen, H., Dubrovskii, V. G.

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Photovoltaic properties of GaAs:Be nanowire arrays von Bouravleuv, A. D., Beznasyuk, D. V., Gilstein, E. P., Tchernycheva, M., De Luna Bugallo, A., Rigutti, L., Yu, L., Proskuryakov, Yu, Shtrom, I. V., Timofeeva, M. A., Samsonenko, Yu. B., Khrebtov, A. I., Cirlin, G.

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