Skin alcohol perspiration measurements using MOX sensors von Lawson, B., Aguir, K., Fiorido, T., Martini-Laithier, V., Bouchakour, R., Burtey, S., Reynard-Carette, Ch, Bendahan, M.

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Design of analog nonlinear transformations based on a Gilbert multiplier for energy detection von Vauche, R., Benjelloun, Z., Assila, R. Belhadj Mefteh, Rahajandraibe, W., Bouchakour, R., Barthelemy, H.

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New EEPROM concept for single bit operation von Raguet, J.R., Laffont, R., Bouchakour, R., Bidal, V., Regnier, A., Mirabel, J.M.

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Modeling charge variation during data retention of MLC Flash memories von Postel-Pellerin, J., Lalande, F., Canet, P., Bouchakour, R., Jeuland, F., Morancho, L.

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Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories von Postel-Pellerin, J., Lalande, F., Canet, P., Bouchakour, R., Jeuland, F., Bertello, B., Villard, B.

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Tunneling injection temperature dependence in EEPROM cell von Zahi, Y., Laffont, R., Lalande, F., Boutahar, S., Bouchakour, R.

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NMOS electrical model for halo implant study von Regnier, A., Portal, J.M., Bouchakour, R.

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Extraction of 3D parasitic capacitances in 90nm and 22nm NAND flash memories von Postel-Pellerin, J., Lalande, F., Canet, P., Bouchakour, R., Jeuland, F., Bertello, B., Villard, B.

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CHE and CHISEL characterization procedure for compact Flash cell model von Régnier, A., Saillet, B., Portal, J.M., Bouchakour, R.

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Impact of stress on Fowler–Nordheim parameters effects on EEPROM threshold voltage von Postel-Pellerin, J., Lalande, F., Canet, P., Boutahar, S., Bouchakour, R., Pizzuto, O., Régnier, A.

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Temperature and drain voltage dependence of gate-induced drain leakage von Lopez, L, Masson, P, Née, D, Bouchakour, R

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A new architecture of dual control gate EEPROM von Regnier, A., Laffont, R., Bouchakour, R., Mirabel, J.M.

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Deterioration of stressed oxides: Application to the prediction of a non-volatile memory cell endurance von Razafindramora, J., Canet, P., Lalande, F., Bouchakour, R., Boivin, P., Mirabel, J.-M.

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Non-volatile memory cell design: Coupling ratio impact on tunnel oxide reliability von Bouquet, V., Canet, P., Lalande, F., Bouchakour, R., Mirabel, J.M.

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A new floating gate compact model applied to flash memory cell von Laffont, R., Masson, P., Bernardini, S., Bouchakour, R., Mirabel, J.M.

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EEPROM cell design: paradoxical choice of the coupling ratio von Canet, P., Bouchakour, R., Lalande, F., Mirabel, J.M.

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Modelling of the 1T-Bulk capacitor-less DRAM cell with improved performances: The way to scaling von Ranica, R., Villaret, A., Malinge, P., Candelier, P., Masson, P., Bouchakour, R., Mazoyer, P., Skotnicki, T.

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Simulation TCAD, fabrication, caractérisation électrique et extraction des paramètres physiques du procédé MOS von Postel-Pellerin, J., Della Marca, V., Aguirre-Morales, J.-D., Bouchakour, R., Laffont, R.

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A compact DC model of gate oxide short defect von Bouchakour, R., Portal, J.M., Gallière, J.M., Azais, F., Bertrand, Y., Renovell, M.

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Improvement of EEPROM cell reliability by optimization of signal programming von Canet, P., Bouchakour, R., Harabech, N., Boivin, Ph, Mirabel, J.M., Plossu, C.

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