Physics of the Switching Kinetics in Resistive Memories von Menzel, Stephan, Böttger, Ulrich, Wimmer, Martin, Salinga, Martin

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Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches von Menzel, Stephan, Waters, Matthias, Marchewka, Astrid, Böttger, Ulrich, Dittmann, Regina, Waser, Rainer

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Nanobattery Effect in RRAMs-Implications on Device Stability and Endurance von Tappertzhofen, Stefan, Linn, Eike, Bottger, Ulrich, Waser, Rainer, Valov, Ilia

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Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO3 Resistive Switching Memories von Fleck, Karsten, Böttger, Ulrich, Waser, Rainer, Menzel, Stephan

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Effect of RESET Voltage on Distribution of SET Switching Time of Bipolar Resistive Switching in a Tantalum Oxide Thin Film von Nishi, Yoshifumi, Fleck, Karsten, Bottger, Ulrich, Waser, Rainer, Menzel, Stephan

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Ferroelectricity in Simple Binary ZrO2 and HfO2 von Müller, Johannes, Böscke, Tim S, Schröder, Uwe, Mueller, Stefan, Bräuhaus, Dennis, Böttger, Ulrich, Frey, Lothar, Mikolajick, Thomas

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Origin of the SET Kinetics of the Resistive Switching in Tantalum Oxide Thin Films von Nishi, Yoshifumi, Menzel, Stephan, Fleck, Karsten, Böttger, Ulrich, Waser, Rainer

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Simulation of multilevel switching in electrochemical metallization memory cells von Menzel, Stephan, Böttger, Ulrich, Waser, Rainer

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The ultimate switching speed limit of redox-based resistive switching devices von Menzel, Stephan, von Witzleben, Moritz, Havel, Viktor, Böttger, Ulrich

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Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory von Wiefels, Stefan, Von Witzleben, Moritz, Huttemann, Michael, Bottger, Ulrich, Waser, Rainer, Menzel, Stephan

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Crossover From Deterministic to Stochastic Nature of Resistive-Switching Statistics in a Tantalum Oxide Thin Film von Nishi, Yoshifumi, Bottger, Ulrich, Waser, Rainer, Menzel, Stephan

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An integrated microelectromechanical microwave switch based on piezoelectric actuation von Kügeler, Carsten, Hennings, Alexander, Böttger, Ulrich, Waser, Rainer

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Chemical Solution Deposition of Ferroelectric Hafnium Oxide for Future Lead Free Ferroelectric Devices von Starschich, Sergej, Griesche, David, Schneller, Theodor, Böttger, Ulrich

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Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics von Fengler, Franz P. G., Pešić, Milan, Starschich, Sergej, Schneller, Theodor, Künneth, Christopher, Böttger, Ulrich, Mulaosmanovic, Halid, Schenk, Tony, Park, Min Hyuk, Nigon, Robin, Muralt, Paul, Mikolajick, Thomas, Schroeder, Uwe

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Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes von Pešić, Milan, Knebel, Steve, Geyer, Maximilian, Schmelzer, Sebastian, Böttger, Ulrich, Kolomiiets, Nadiia, Afanas'ev, Valeri V., Cho, Kyuho, Jung, Changhwa, Chang, Jaewan, Lim, Hanjin, Mikolajick, Thomas, Schroeder, Uwe

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Intrinsic RESET Speed Limit of Valence Change Memories von von Witzleben, Moritz, Wiefels, Stefan, Kindsmüller, Andreas, Stasner, Pascal, Berg, Fenja, Cüppers, Felix, Hoffmann-Eifert, Susanne, Waser, Rainer, Menzel, Stephan, Böttger, Ulrich

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Mechanical force sensors using organic thin-film transistors von Darlinski, Grzegorz, Böttger, Ulrich, Waser, Rainer, Klauk, Hagen, Halik, Marcus, Zschieschang, Ute, Schmid, Günter, Dehm, Christine

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Ferroelectric phase transitions in nanoscale HfO 2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors von Hoffmann, Michael, Schroeder, Uwe, Künneth, Christopher, Kersch, Alfred, Starschich, Sergej, Böttger, Ulrich, Mikolajick, Thomas

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Ferroelectricity in Simple Binary ZrO 2 and HfO 2 von Müller, Johannes, Böscke, Tim S., Schröder, Uwe, Mueller, Stefan, Bräuhaus, Dennis, Böttger, Ulrich, Frey, Lothar, Mikolajick, Thomas

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Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors von Hoffmann, Michael, Schroeder, Uwe, Künneth, Christopher, Kersch, Alfred, Starschich, Sergej, Böttger, Ulrich, Mikolajick, Thomas

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