Ohmic contacts and schottky barriers to n-GaN von Fan, Z., Mohammad, S. N., Kim, W., Aktas, Ö., Botchkarev, A. E., Suzue, K., Morkoc, H., Duxstad, K., Haller, E. E.

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Optical properties and defects in GaAsN and InGaAsN films and quantum well structures von Polyakov, A.Y, Smirnov, N.B, Govorkov, A.V, Botchkarev, A.E, Nelson, N.N, Fahmi, M.M.E, Griffin, J.A, Khan, A, Noor Mohammad, S, Johnstone, D.K, Bublik, V.T, Chsherbatchev, K.D, Voronova, M.I, Kasatochkin, V.S

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Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy von Van Nostrand, Joseph E, Chey, S.Jay, Cahill, David G, Botchkarev, A.E, Morkoç, H

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High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) Structures von Smith, G., Xu, G., Lu, C., Morkoç, Hadis, Kim, W., Tang, H., Botchkarev, A.E., Estes, M., Wolf, P., Salvador, A., Dang, T.

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GaAs-based metal-insulator-semiconductor structures with low interface traps using molecular beam epitaxy and chemical vapor deposition von Park, D.G., Tao, M., Reed, J., Suzue, K., Botchkarev, A.E., Fan, Z., Gao, G.B., Chey, S.J., Van Nostrand, J., Cahill, D.G., Morkoç, H.

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Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Epitaxy von Smith, David John, Gibson, J. Murray, Yeadon, M., Morkoç, Hadis, Kim, W., Tang, H., Hamdani, F., Botchkarev, A.E., Salvador, A.

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Ultraviolet Stimulated Emission in GaN/AlGaN Multiple Quantum Wells von Coli, G., Calcagnile, L., Morkoç, Hadis, Kim, W., Cingolani, R., Tang, H., Rinaldi, D., Botchkarev, A.E., Salvador, A.

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Non-Linear Exciton Spectroscopy of GaN/AlGaN Quantum Wells von Coli, G., Calcagnile, L., Morkoç, Hadis, Kim, W., Cingolani, R., Rinaldi, R., Tang, H., Botchkarev, A.E., Salvador, A.

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