Conductive Carbon as a Novel Front-End Electrode Material for a Trench DRAM von Boscke, T.S., Guerrero, G., Liebau, M., Uppal, S., Yu Pi Lee, Pethe, W., Patz, M., Kleye, A., Su, P.-Y., Orth, A., Wen-Chung Liu, Lutzen, J.

Volltext

Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics von Sivasubramani, P., Boscke, T.S., Huang, J., Young, C.D., Kirsch, P.D., Krishnan, S.A., Quevedo-Lopez, M.A., Govindarajan, S., Ju, B.S., Harris, H.R., Lichtenwalner, D.J., Jur, J.S., Kingon, A.I., Kim, J., Gnade, B.E., Wallace, R.M., Bersuker, G., Lee, B.H., Jammy, R.

Volltext

Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition von Müller, J., Böscke, T.S., Schröder, U., Reinicke, M., Oberbeck, L., Zhou, D., Weinreich, W., Kücher, P., Lemberger, M., Frey, L.

Volltext

Improved manufacturability of ZrO 2 MIM capacitors by process stabilizing HfO 2 addition von Müller, J., Böscke, T.S., Schröder, U., Reinicke, M., Oberbeck, L., Zhou, D., Weinreich, W., Kücher, P., Lemberger, M., Frey, L.

Volltext

Tetragonal Phase Stabilization by Doping as an Enabler of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM von Boscke, T.S., Govindarajan, S., Fachmann, C., Heitmann, J., Avellan, A., Schroder, U., Kudelka, S., Kirsch, P.D., Krug, C., Hung, P.Y., Song, S.C., Ju, B.S., Price, J., Pant, G., Gnade, B.E., Krautschneider, W., Lee, B.-H., Jammy, R.

Volltext

Higher Permittivity Rare Earth-Doped HfO2 and ZrO2 Dielectrics for Logic and Memory Applications von Govindarajan, S., Boscke, T.S., Kirsch, P.D., Quevedo-Lopez, M.A., Sivasubramani, P., Song, S.C., Wallace, R.W., Gnade, B.E., Hung, P.Y., Price, J., Schroder, U., Ramanathan, S., Lee, B.H., Jammy, R.

Volltext