Simulation of a Vertical Ballistic Quantum-Barrier Field-Effect Transistor Based on an Undoped AlxGa1–xAs Quantum Nanowire von Pozdnyakov, D. V., Borzdov, A. V., Borzdov, V. M.

Volltext

Calculation of Electrophysical Characteristics of Semiconductor Quantum Wire Device Structures with One-Dimensional Electron Gas von Pozdnyakov, D. V., Borzdov, A. V., Borzdov, V. M.

Volltext

Monte Carlo Simulation of Flash Memory Elements’ Electrophysical Parameters von Zhevnyak, O. G., Borzdov, V. M., Borzdov, A. V., Petlitsky, A. N.

Volltext

Self-consistent calculations of phonon scattering rates in the GaAs transistor structure with one-dimensional electron gas von Borzdov, A. V., Pozdnyakov, D. V., Galenchik, V. O., Borzdov, V. M., Komarov, F. F.

Volltext

Electron transport in armchair single-wall carbon nanotubes von Pozdnyakov, D.V., Galenchik, V.O., Komarov, F.F., Borzdov, V.M.

Volltext

The impruvement of process flow making bipolar static induction transistor and its device-process simulation von N. L. Lagunovich, V. M. Borzdov, A. S. Turtsevich

Volltext

NUMERICAL SIMULATION OF ELECTRIC CHARACTERISTICS OF DEEP SUBMICRON SILICON-ON-INSULATOR MOS TRANSISTOR von A. V. Borzdov, V. M. Borzdov, N. N. Dorozhkin

Volltext

NUMERICAL SIMULATION OF ELECTRIC CHARACTERISTICS OF DEEP SUBMICRON SILICON-ON-INSULATOR MOS TRANSISTOR von Borzdov, A. V., Borzdov, V. M., Dorozhkin, N. N.

Volltext

The influence of energy levels broadening on intersubband acoustic phonon scattering rates in quantum wire von Borzdov, V.M., Galenchik, V.O., Komarov, F.F., Pozdnyakov, D.V., Zhevnyak, O.G.

Volltext

Intensity of intersubband electron scattering by polar optical phonons in semiconductor quantum wires with account of energy level broadening von Pozdnyakov, D. V., Borzdov, V. M.

Volltext

A multiband quantum well with an external electric field von Vrubel, M.M, Borzdov, V.M

Volltext

Technology Computer-Aided Design and Study of Prototypes of a Silicon Zener Diode von Dudar, N. L., Borzdov, V. M., Turtsevich, A. S.

Volltext

Evaluation of the effective threshold energy of the Interband impact ionization in a deep-submicron silicon n-channel MOS transistor von Borzdov, V. M., Borzdov, A. V., Speransky, D. S., V’yurkov, V. V., Orlikovsky, A. A.

Volltext

Monte Carlo simulation of electron heating in a one-dimensional GaAs-quantum conductor von BORZDOV, V. M, ZHEVNYAK, O. G, KOMAROV, F. F, KHOMICH, A. V

Volltext

Calculation of the gate current due to injection of hot electrons into the subgate oxide of a submicrometer MOS field-effect transistor von BORZDOV, V. M, BOREIKO, N. P, GALENCHIK, V. O, ZHEVNYAK, O. G, KOMAROV, F. F

Volltext

Calculation of current-voltage characteristics of gallium arsenide symmetric double-barrier resonance tunneling structures with allowance for the destruction of electron-wave coher... von Pozdnyakov, D. V., Borzdov, V. M., Komarov, F. F.

Volltext

Effect of a transverse applied electric field on electron drift velocity in a GaAs quantum wire: A Monte Carlo simulation von Borzdov, A. V., Pozdnyakov, D. V., Borzdov, V. M., Orlikovsky, A. A., V’yurkov, V. V.

Volltext

Modeling of the morphology of aluminum films before and after different kinds of thermal treatment von PILIPPENKO, V. A, MALOFEEV, V. M, PONOMAR', V. N, MIKHNYUK, A. N, BORZDOV, V. M

Volltext

Hybrid model of thermostabilization of the drain current in n-channel MOS transistors von ANDREEV, A. D, BORZDOV, V. M, VALIEV, A. A, ZHEVNYAK, O. G, KOMAROV, F. F

Volltext

Monte Carlo simulation of electron scattering processes by ionized impurity in conductive channels of micro- and nanodevice structures von Borzdov, V M, Speransky, D S

Volltext bestellen