Synthesis and properties of antimonide nanowires von Mattias Borg, B, Wernersson, Lars-Erik

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Controlling the Abruptness of Axial Heterojunctions in III–V Nanowires: Beyond the Reservoir Effect von Dick, Kimberly A, Bolinsson, Jessica, Borg, B. Mattias, Johansson, Jonas

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Single InAs/GaSb Nanowire Low-Power CMOS Inverter von Dey, Anil W, Svensson, Johannes, Borg, B. Mattias, Ek, Martin, Wernersson, Lars-Erik

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InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch von Caroff, Philippe, Messing, Maria E, Mattias Borg, B, Dick, Kimberly A, Deppert, Knut, Wernersson, Lars-Erik

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InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors von Borg, B. Mattias, Dick, Kimberly A., Ganjipour, Bahram, Pistol, Mats-Erik, Wernersson, Lars-Erik, Thelander, Claes

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Diameter Limitation in Growth of III-Sb-Containing Nanowire Heterostructures von Ek, Martin, Borg, B. Mattias, Johansson, Jonas, Dick, Kimberly A

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Electrical properties of GaSb InAsSb core shell nanowires von Ganjipour, Bahram, Sepehri, Sobhan, Dey, Anil W, Tizno, Ofogh, Mattias Borg, B, Dick, Kimberly A, Samuelson, Lars, Wernersson, Lars-Erik, Thelander, Claes

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Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires von Ganjipour, Bahram, Ek, Martin, Mattias Borg, B., Dick, Kimberly A., Pistol, Mats-Erik, Wernersson, Lars-Erik, Thelander, Claes

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Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates von Persson, Karl-Magnus, Berg, Martin, Borg, Mattias B., Jun Wu, Johansson, Sofia, Svensson, Johannes, Jansson, Kristofer, Lind, Erik, Wernersson, Lars-Erik

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Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays von Mattias Borg, B., Johansson, Jonas, Storm, Kristian, Deppert, Knut

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Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors von Svensson, Johannes, Anttu, Nicklas, Vainorius, Neimantas, Borg, B. Mattias, Wernersson, Lars-Erik

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Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications von Ghalamestani, Sepideh Gorji, Johansson, Sofia, Borg, B Mattias, Lind, Erik, Dick, Kimberly A, Wernersson, Lars-Erik

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High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires von Ganjipour, Bahram, Dey, Anil W, Borg, B. Mattias, Ek, Martin, Pistol, Mats-Erik, Dick, Kimberly A, Wernersson, Lars-Erik, Thelander, Claes

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Diameter reduction of nanowire tunnel heterojunctions using in situ annealing von Mattias Borg, B., Ek, Martin, Dick, Kimberly A., Ganjipour, Bahram, Dey, Anil W., Thelander, Claes, Wernersson, Lars-Erik

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High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors von Dey, A. W., Borg, B. M., Ganjipour, B., Ek, M., Dick, K. A., Lind, E., Thelander, C., Wernersson, L.

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High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET von EGARD, Mikael, OHLSSON, Lars, ÄRLELID, Mats, PERSSON, Karl-Magnus, MATTIAS BORG, B, LENRICK, Filip, WALLENBERG, Reine, LIND, Erik, WERNERSSON, Lars-Erik

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Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy von Wu, Jun, Borg, B. Mattias, Jacobsson, Daniel, Dick, Kimberly A., Wernersson, Lars-Erik

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High-Performance InAs Nanowire MOSFETs von Dey, A. W., Thelander, C., Lind, E., Dick, K. A., Borg, B. M., Borgstrom, M., Nilsson, P., Wernersson, L.

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GaSb nanowire single-hole transistor von Ganjipour, Bahram, Nilsson, Henrik A., Mattias Borg, B., Wernersson, Lars-Erik, Samuelson, Lars, Xu, H. Q., Thelander, Claes

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In0.53Ga0.47As RTD―MOSFET Millimeter-Wave Wavelet Generator von EGARD, Mikael, ÄRLELID, Mats, OHLSSON, Lars, MATTIAS BORG, B, LIND, Erik, WERNERSSON, Lars-Erik

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