Millisecond flash-lamp annealing of LaLuO3 von LEHMANN, J, SHEVCHENKO, N, MÜCKLICH, A, BORANY, J. V, SKORUPA, W, SCHUBERT, J, LOPEZ, J. M. J, MANTL, S

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Investigation of ultrathin tantalum based diffusion barrier films using AES and TEM von Dittmar, Kornelia, Engelmann, Hans-Jürgen, Peikert, M., Wieser, E., Borany, J.V.

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Incorporation of nitrogen in thin tantalum films using plasma immersion ion implantation von Peikert, M., Wieser, E., Borany, J.V., Reuther, H., Dittmar, K., Gehre, D.

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Topotaxial growth of Ti2AlN by solid state reaction in AlN∕Ti(0001) multilayer thin films von Höglund, C., Beckers, M., Schell, N., Borany, J. v., Birch, J., Hultman, L.

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Structural and optical studies of Pr implanted ZnO films subjected to a long-time or ultra-fast thermal annealing von Ratajczak, R., Mieszczynski, C., Prucnal, S., Guziewicz, E., Stachowicz, M., Snigurenko, D., Gaca, J., Wojcik, M., Böttger, R., Heller, R., Skorupa, W., Borany, J.V., Turos, A.

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Compton imaging in a high energetic photon field von Kormoll, T., Golnik, C., Akhmadaliev, S., Bemmerer, D., Borany, J. V., Fiedler, F., Hueso Gonzalez, F., Heidel, K., Kempe, M., Rohling, H., Schmidt, K., Schone, S., Wagner, L., Pausch, G.

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Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics von Lehmann, J., Hübner, R., Borany, J.V., Skorupa, W., Mikolajick, T., Schäfer, A., Schubert, J., Mantl, S.

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Millisecond flash lamp annealing for LaLuO sub(3) and LaScO sub(3) high-k dielectrics von Lehmann, J, Huebner, R, Borany, J V, Skorupa, W, Mikolajick, T, Schaefer, A, Schubert, J, Mantl, S

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Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics: Insulating Films on Semiconductors 2013 von LEHMANN, J, HÜBNER, R, BORANY, J. V, SKORUPA, W, MIKOLAJICK, T, SCHÄFER, A, SCHUBERT, J, MANTL, S

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Millisecond flash-lamp annealing of LaLuO sub(3) von Lehmann, J, Shevchenko, N, Muecklich, A, Borany, J V, Skorupa, W, Schubert, J, Lopez, JMJ, Mantl, S

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Dependence of the silicon detector response to heavy ions on the direction of incidence: Computer simulations versus experimental data von Pilz, W., Borany, J.V., Grötzschel, R., Jiang, W., Posselt, M., Schmidt, B.

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Topotaxial growth of Ti 2 Al N by solid state reaction in Al N ∕ Ti ( 0001 ) multilayer thin films von Höglund, C., Beckers, M., Schell, N., Borany, J. v., Birch, J., Hultman, L.

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In situ observation of electron-beam-induced ripening of Ge clusters in thin SiO2 layers von Klimenkov, M., Matz, W., v. Borany, J.

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Topotaxial growth of Ti{sub 2}AlN by solid state reaction in AlN/Ti(0001) multilayer thin films von Hoeglund, C., Beckers, M., Schell, N., Borany, J. v., Birch, J., Hultman, L., GKSS Research Center Geesthacht, Max-Planck-Str. 1, D-21502 Geesthacht, Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden, Thin Film Physics Division, Department of Physics, Chemistry and Biology

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In situ observation of electron-beam-induced ripening of Ge clusters in thin SiO 2 layers von Klimenkov, M., Matz, W., v. Borany, J.

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Microstructure and electrical properties of gate SiO2 containing Ge nanoclusters for memory applications von Thees, H.-J, Wittmaack, M, Stegemann, K.-H, Borany, J.v, Heinig, K.-H, Gebel, T

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Microstructure and electrical properties of gate SiO sub(2) containing Ge nanoclusters for memory applications von Thees, H-J, Wittmaack, M, Stegemann, K-H, Borany, J V, Heinig, K-H, Gebel, T

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Microstructure and electrical properties of Ge- and Si-nanoclusters in implanted gate oxide for embedded memory applications von Stegemann, K.-H., Thees, H.-J., Wittmaack, M., Van Borany, J., Heeinig, K.H., Gebel, T.

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Size- and position-controlled Ge nanocrystals separated by high-k dielectrics von Lehninger, D., Honeit, F., Rafaja, D., Klemm, V., Röder, C., Khomenkova, L., Schneider, F., von Borany, J., Heitmann, J.

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Charge trapping of Ge-nanocrystals embedded in TaZrOx dielectric films von Lehninger, D., Seidel, P., Geyer, M., Schneider, F., Klemm, V., Rafaja, D., von Borany, J., Heitmann, J.

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