Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition von Seredin, P.V., Terekhov, V.A., Barkov, K.A., Arsentyev, I.N., Bondarev, A.D.

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Ultrathin nano-sized Al2O3 strips on the surface of por-Si von Seredin, P.V., Lenshin, A.S., Kashkarov, V.M., Lukin, A.N., Arsentiev, I.N., Bondarev, A.D., Tarasov, I.S.

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Distinctions of the growth and structural-spectroscopic investigations of thin AlN films grown on the GaAs substrates von Seredin, P.V., Kashkarov, V.M., Arsentyev, I.N., Bondarev, A.D., Tarasov, I.S.

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Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition von Lubyanskiy, Ya. V., Bondarev, A. D., Soshnikov, I. P., Bert, N. A., Zolotarev, V. V., Kirilenko, D. A., Kotlyar, K. P., Pikhtin, N. A., Tarasov, I. S.

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Investigations of nanodimensional [Al.sub.2][O.sub.3] films deposited by ion-plasma sputtering onto porous silicon von Seredin, P.V, Lenshin, A.S, Goloshchapov, D.L, Lukin, A.N, Arsentyev, I.N, Bondarev, A.D, Tarasov, I.S

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Properties of AlN films deposited by reactive ion-plasma sputtering von Bert, N. A., Bondarev, A. D., Zolotarev, V. V., Kirilenko, D. A., Lubyanskiy, Ya. V., Lyutetskiy, A. V., Slipchenko, S. O., Petrunov, A. N., Pikhtin, N. A., Ayusheva, K. R., Arsentyev, I. N., Tarasov, I. S.

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Structure and optical properties of thin [Al.sub.2][O.sub.3] films deposited by the reactive ion-plasma sputtering method on GaAs substrates von Seredin, P.V, Goloschapov, D.L, Lukin, A.N, Len'shin, A.S, Bondarev, A.D, Arsent'ev, I.N, Vavilova, L.S, Tarasov, I.S

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Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates von Seredin, P. V., Goloshchapov, D. L., Lenshin, A. S., Lukin, A. N., Fedyukin, A. V., Arsentyev, I. N., Bondarev, A. D., Lubyanskiy, Y. V., Tarasov, I. S.

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On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures von Pikhtin, N. A., Lyutetskiy, A. V., Nikolaev, D. N., Slipchenko, S. O., Sokolova, Z. N., Shamakhov, V. V., Shashkin, I. S., Bondarev, A. D., Vavilova, L. S., Tarasov, I. S.

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AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide von Slipchenko, S. O., Podoskin, A. A., Vinokurov, D. A., Bondarev, A. D., Kapitonov, V. A., Pikhtin, N. A., Kop’ev, P. S., Tarasov, I. S.

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Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm) von Shashkin, I. S., Vinokurov, D. A., Lyutetskiy, A. V., Nikolaev, D. N., Pikhtin, N. A., Rastegaeva, M. G., Sokolova, Z. N., Slipchenko, S. O., Stankevich, A. L., Shamakhov, V. V., Veselov, D. A., Bondarev, A. D., Tarasov, I. S.

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Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate von Vinokurov, D. A., Nikolaev, D. N., Pikhtin, N. A., Stankevich, A. L., Shamakhov, V. V., Bondarev, A. D., Rudova, N. A., Tarasov, I. S.

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Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate von Vinokurov, D. A., Kapitonov, V. A., Nikolaev, D. N., Pikhtin, N. A., Stankevich, A. L., Shamakhov, V. V., Bondarev, A. D., Vavilova, L. S., Tarasov, I. S.

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Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm) von Ladugin, M. A., Lyutetskiy, A. V., Marmalyuk, A. A., Padalitsa, A. A., Pikhtin, N. A., Podoskin, A. A., Rudova, N. A., Slipchenko, S. O., Shashkin, I. S., Bondarev, A. D., Tarasov, I. S.

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High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers von Garbuzov, D.Z., Antonishkis, N.Y., Bondarev, A.D., Gulakov, A.B., Zhigulin, S.N., Katsavets, N.I., Kochergin, A.V., Rafailov, E.V.

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High-power 0. 8. mu. m InGaAsP-GaAs SCH SQW lasers von Garbuzov, D.Z., Antonishkis, N.Y., Bondarev, A.D., Gulakov, A.B., Zhigulin, S.N., Katsavets, N.I., Kochergin, A.V., Rafailov, E.V.

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Effects of spatial dispersion on the Casimir force between graphene sheets von Drosdoff, D., Phan, A. D., Woods, L. M., Bondarev, I. V., Dobson, J. F.

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Phase transitions and caloric effects in ferroelectric solid solutions of ammonium and rubidium hydrosulfates von Mikhaleva, E. A., Flerov, I. N., Bondarev, V. S., Gorev, M. V., Vasiliev, A. D., Davydova, T. N.

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Measurement of the tensor analyzing power Ayy in inclusive breakup of 9 GeV/c deuterons on carbon at large transverse momenta of protons von Afanasiev, S.V., Arkhipov, V.V., Azhgirey, L.S., Bondarev, V.K., Chernykh, E.V., Ehara, M., Ershov, V.P., Filipov, G., Fimushkin, V.V., Fukui, S., Hasegawa, S., Hasegawa, T., Horikawa, N., Isupov, A.Yu, Iwata, T., Kageya, T., Kashirin, V.A., Kawano, M., Khrenov, A.N., Kirillov, A.D., Kolesnikov, V.I., Ladygin, V.P., Litvinenko, A.G., Malakhov, A.I., Matsuda, T., Migulina, I.I., Nakayama, H., Nikiforov, A.S., Nomofilov, A.A., Osada, E., Penev, V.N., Pilipenko, Yu.K., Reznikov, S.G., Rukoyatkin, P.A., Semenov, A.Yu, Semenova, I.A., Sharov, V.I., Stoletov, G.D., Strunov, L.N., Takabayashi, N., Wakai, A., Yudin, N.P., Zaporozhets, S.A., Zhmyrov, V.N., Zolin, L.S.

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An experimental run on the new superconducting accelerator Nuclotron at 3.8 and 6.2 GeV/c deuteron momemtum von Baldin, A.M., Abraamyan, Kh.U., Afanasiev, S.V., Anisimov, Yu.S., Arkhipov, V.V., Artyomov, A.S., Avdeichikov, V.V., Bondarev, V.K., Isupov, A.Yu, Kashirin, V.A., Khrenov, A.N., Kolesnikov, V.I., Kovalenko, A.D., Kuznetsov, V.A., Litvinenko, A.G., Malakhov, A.I., Maniakov, P.K., Matyushevsky, E.A., Melkumov, G.L., Migulina, I.I., Nikiforov, A.S., Nikitin, V.A., Nomokonov, P.V., Reznikov, S.G., Rufanov, I.A., Semenov, A.Yu, Smirnov, V.A., Zarubin, P.I., Atanasov, I., Penev, V.N., Berlev, A.I., Krasnov, V.A., Maevskaia, A.I., Zadorozhny, S.V.

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