SiGe HBTs on bonded SOI incorporating buried silicide layers von Bain, M., El Mubarek, H.A.W., Bonar, J.M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B.M., Hemment, P.L.F., Hall, S., Ashburn, P.

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Arsenic diffusion in Si and strained SixGe1−x alloys at 1000 °C von Uppal, Suresh, Bonar, J.M., Zhang, Jing, Willoughby, A.F.W.

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Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si $_1-x$ Ge $_x von ElMubarek, H.A.W., Karunaratne, M., Bonar, J.M., Dilliway, G.D., Wang, Y., Hemment, P.L.F., Willoughby, A.F., Ashburn, P.

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The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si0.9Ge0.1:Si substrates von Riley, L.S, Hall, S, Bonar, J.M

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Effect of fluorine implantation dose on boron thermal diffusion in silicon von El Mubarek, H. A. W., Bonar, J. M, Dilliway, G. D., Ashburn, P., Karunaratne, M., Willoughby, A. F., Wang, Y., Hemment, P. L. F., Price, R., Zhang, J., Ward, P.

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Strain relaxation phenomena in GexSi1−x/Si strained structures von Hull, R., Bean, J.C., Eaglesham, D.J., Bonar, J.M., Buescher, C.

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Effect of fluorine on boron diffusion under interstitial injection from the surface von Kham, M.N., El Mubarek, H.A.W., Bonar, J.M., Chivers, D., Ashburn, P.

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110-GHz fT silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression von KHAM, M. N, EL MUBAREK, H. A. W, BONAR, J. M, ASHBURN, Peter, WARD, P, FIORE, L, PETRALIA, R, ALEMANNI, C, MESSINA, A

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Effect of fluorine on boron thermal diffusion in the presence of point defects von Kham, M.N., El Mubarek, H.A.W., Bonar, J.M., Ashburn, P.

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Arsenic diffusion in Si and strained Si x Ge 1− x alloys at 1000 °C von Uppal, Suresh, Bonar, J.M., Zhang, Jing, Willoughby, A.F.W.

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Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si1-xGex von EL MUBAREK, H. A. W, KARUNARATNE, M, BONAR, J. M, DILLIWAY, G. D, WANG, Y, HEMMENT, P. L. F, WILLOUGHBY, A. F, ASHBURN, P

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110-GHz f/sub T/ silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression von Kham, M.N., Mubarek, H.A.W.E., Bonar, J.M., Ashburn, P., Ward, P., Fiore, L., Petralia, R., Alemanni, C., Messina, A.

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Thick selective epitaxial growth of silicon at 960°C using silane only von Afshar-Hanaii, N., Bonar, J.M., Evans, A.G.R., Parker, G.J., Starbuck, C.M.K., Kemhadjian, H.A.

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Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si/sub 1-x/Ge/sub x von Mubarek, H.A.W.E., Karunaratne, M., Bonar, J.M., Dilliway, G.D., Wang, Y., Hemment, P.L.F., Willoughby, A.F., Ashburn, P.

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Diffusion and activation of dopants in silicon and advanced silicon-based materials von Pichler, Peter, Ortiz, Christophe J, Colombeau, Benjamin, Cowern, Nicholas E B, Lampin, Evelyne, Uppal, Suresh, Karunaratne, M S A, Bonar, Janet M, Willoughby, Arthur F W, Claverie, Alain, Cristiano, Filadelfo, Lerch, Wilfried, Paul, Silke

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Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition von Zhang, W., Lloyd, N.S., Osman, K., Bonar, J.M., Hamel, J.S., Bagnall, D.M.

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Low-pressure chemical vapour deposition growth of epitaxial silicon selective to silicon nitride von Lloyd, N.S, Bonar, J.M

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Lateral SiGe heterojunction bipolar transistor by confined selective epitaxial growth: simulation and material growth von Pengpad, P., Osman, K., Lloyd, N.S., Bonar, J.M., Ashburn, P., Kemhadjian, H.A., Hamel, J.S., Bagnall, D.M.

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The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si 0.9Ge 0.1:Si substrates von Riley, L.S, Hall, S, Bonar, J.M

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Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation von El Mubarek, H.A.W., Wang, Y., Price, R., Bonar, J.M., Zhang, J., Hemment, P.L.F., Ashburn, P.

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