Current--Voltage Characteristics of n-B-p Structures with Absorbing As Layer von Sednev, M.V, Boltar, K.O, Irodov, N.A, Demidov, S.S

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320 x 256 avalanche array photodetector on the basis of ternary alloys of the group with an InGaAs absorbing layer and an InAlAs barrier layer von Iakovleva, N.I, Boltar, K.O, Sednev, M.V, Lopukhin, A.A, Korotaev, E.D

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Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate von Burlakov, I. D., Boltar, K. O., Vlasov, P. V., Lopukhin, A. A., Toropov, A. I., Zhuravlev, K. S., Fadeev, V. V.

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Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 x 288 Elements von Boltar, K.O, Burlakov, I.D, Vlasov, P.V, Lopukhin, A.A, Chaliy, V.P, Katsavets, N.I

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Focal plane arrays mesastructures formation by ion-beam etching von Sednev, M. V., Boltar, K. O., Sharonov, Yu. P., Lopukhin, A. A.

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Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure von Andreev, D. S., Boltar, K. O., Vlasov, P. V., Irodov, N. A., Lopuhin, A. A.

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An investigation into the effect of high-power pulse IR radiation on the properties of surfaces of [Cd.sub.x][Hg.sub.1-x]Te heteroepitaxial layers von Boltar', K.O, Burlakov, I.D, Voitsekhovskii, A.V, Sizov, A.L, Sredin, V.G, Talipov, N. Kh, Shul'ga, S.A

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Modeling and experimental FTS investigation of IR reflectance spectra from multilayered semiconductor structures von Boltar, K.O., Fedirko, V.A.

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