Ion fraction map of He + scattered from a Si( [formula omitted])-(2×1) surface von Vaquila, I, Bolotin, I.L, Ito, T, Makarenko, B.N, Rabalais, J.W

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Scattering and recoiling mapping of the Kr–Pt(1 1 1) system by SARIS von Bolotin, I.L, Kutana, A, Makarenko, B.N, Rabalais, J.W

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Kinetics and structure of O2 chemisorption on Ni(1 1 1) von BOLOTIN, I. L, KUTANA, A, MAKARENKO, B, RABALAIS, J. W

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Sputtering yields of PMMA films bombarded by keV C 60 + ions von Bolotin, I.L., Tetzler, S.H., Hanley, L.

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Sputtering yields of PMMA films bombarded by keV C60+ ions von BOLOTIN, I. L, TETZLER, S. H, HANLEY, L

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Anomalous pinning of the Fermi level at the InAs(110)-Cu interface obtained at 10 K von Aristov, V.Yu, Bolotin, I.L., Gelakhova, S.G.

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Blocking map of He + scattered from a Si(0 0 1)-(2 × 1) surface von Ito, T., Bolotin, I.L., Makarenko, B.N., Rabalais, J.W.

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Universal expression for blocking cone size based on the ZBL potential von Kutana, A., Bolotin, I.L., Rabalais, J.W.

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Kinetics and structure of O 2 chemisorption on Ni(1 1 1) von Bolotin, I.L., Kutana, A., Makarenko, B., Rabalais, J.W.

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TOF-SARS study of hydrogen adsorption and desorption kinetics on Si(1 0 0) von Kutana, A, Ito, T, Bolotin, I.L, Makarenko, B, Rabalais, J.W

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Hydrogenation and annealing effects on the trapping times of the minority carriers in In-doped CdTe epitaxial layers grown on p-CdTe (211) substrates von Yuldashev, Sh. U., Bolotin, I. L., Hou, Y. B., Leem, J. H., Jeon, H. C., Kang, T. W., Kim, T. W.

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Electronic structure of the valence band of GdS x and Gd 3S 4 von Grazhulis, V.A., Bozhko, S.I., Bolotin, I.L., Bulanov, O.R., Ionov, A.M.

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Low-energy loss spectroscopy of compounds of family GdS x ( x = 0.8−1.25) von Grazhulis, V.A., Bolotin, I.L., Bozhko, S.I., Bulanov, O.R., Ionov, A.M.

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Electron spectroscopy for (001)Bi 2Sr 2Ca n−1Cu nO 2n+4( n = 1, 2); comparative studies von Bolotin, I.L., Grazhulis, V.A., Ionov, A.M., Karabashev, S.G., Shuliatev, D.A.

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Electronic structure of the valence band of GdSx and Gd3S4 von Grazhulis, V.A., Bozhko, S.I., Bolotin, I.L., Bulanov, O.R., Ionov, A.M.

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Low-energy loss spectroscopy of compounds of family GdSx (x = 0.8−1.25) von Grazhulis, V.A., Bolotin, I.L., Bozhko, S.I., Bulanov, O.R., Ionov, A.M.

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Electron spectroscopy for (001)Bi2Sr2Can−1CunO2n+4(n = 1, 2); comparative studies von Bolotin, I.L., Grazhulis, V.A., Ionov, A.M., Karabashev, S.G., Shuliatev, D.A.

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LEELS study of the formation of the AG-semiconductor (Si. Ge.A 3B 5) interface at 10K von Aristov, V.Yu, Bolotin, I.L., Grazhulis, V.A., Zhilin, V.M.

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Anomalous pinning of the Fermi level at the InAs(110)-Cu interface obtained at 10 K von Aristov, V.Yu, Bolotin, I.L., Gelakhova, S.G.

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Electron spectroscopy for (001) [formula omitted]; comparative studies von Bolotin, I.L., Grazhulis, V.A., Ionov, A.M., Karabashev, S.G., Shuliatev, D.A.

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