Using 3D position sensitivity to reveal response non-uniformities in CdZnTe, TlBr, and CsPbBr3 detectors von Bolotnikov, A.E., Brown, C.A., Carini, G.A., Christian, J., Cirignano, L., Deane, C.R., Dellapenna, A., Deptuch, G., Fried, J., Herrmann, S., Kargar, A., Kim, H., Koslowsky, M.R., Maj, P., Manthena, S.V., Miller, A.L., Miryala, S., Norris, A.M., Ogorodnik, Y., Pinaroli, G., Raguzin, E., Smith, M.B., Squillante, M.R., Squillante, M.S., Tower, J., Valente, A.J., Weststrate, E., Shah, K.S.

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Structural and Chemical Comparison of Graphite and BN/AlN Caps Used for Annealing Ion Implanted SiC von Jones, K.A., Wood, M.C., Zheleva, T.S., Kirchner, K.W., Derenge, M.A., Bolonikov, A., Sudarshan, T.S., Vispute, R.D., Hullavarad, S.S., Dhar, S.

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Comparison of Graphite and BN/AIN Annealing Caps for Ion Implanted SIC von Jones, K A, Wood, M C, Zheleva, T S, Kirchner, K W, Derenge, M A, Bolonikov, A, Sudarshan, T S, Vispute, R D, Hullavarad, S S, Dhar, S

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Structural and Chemical Comparison of Graphite and BN/AIN Caps Used for Annealing Ion Implanted SiC von Jones, KA, Wood, M C, Zheleva, T S, Kirchner, K W, Derenge, M A, Bolonikov, A, Sudarshan, T S, Vispute, R D, Hullavarad, S S, Dhar, S

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Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC von Wood, M.C., Bolonikov, A., Hullavarad, Shiva S., Vispute, R.D., Derenge, Michael A., Zheleva, T.S., Sudarshan, Tangali S., Jones, Kenneth A., Kirchner, K.W., Dhar, S.

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Radiation Hardness Study on SiC Power MOSFETs von Zhu, Xingguang, Lauenstein, J.-M., Bolonikov, A., Jacob, B., Kashyap, A., Sariri, K., Chen, Y.

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Graphite and BN/AlN Annealing Caps for Ion Implanted SiC von Wood, M C, Jones, K A, Zheleva, T S, Kirchner, K W, Derenge, M A, Bolonikov, A, Sudarshan, T S, Vispute, D, Hullavarad, S S, Dhar, S

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