102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz von Haifeng Sun, Alt, A.R., Benedickter, H., Bolognesi, C.R., Feltin, E., Carlin, J.-F., Gonschorek, M., Grandjean, N., Maier, T., Quay, R.

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Surface recombination currents in "Type-II" NpN InP-GaAsSb-InP self-aligned DHBTs von Tao, N.G.M., Honggang Liu, Bolognesi, C.R.

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Emitter-Size Effects and Ultimate Scalability of InP:GaInP/GaAsSb/InP DHBTs von Liu, H.G., Ostinelli, O., Zeng, Y.P., Bolognesi, C.R.

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Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes von Liguang Zheng, Xiong Zhang, Yuping Zeng, Tatavarti, S.R., Watkins, S.P., Bolognesi, C.R., Demiguel, S., Campbell, J.C.

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Extraction of the average collector velocity in high-speed "Type-II" InP-GaAsSb-InP DHBTs von Liu, H.G., Tao, N., Watkins, S.P., Bolognesi, C.R.

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Submicrometer Copper T-Gate AlGaN/GaN HFETs: The Gate Metal Stack Effect von Sun, H.F., Alt, A.R., Bolognesi, C.R.

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Effect of gate-source access region stress on current collapse in AlGaN/GaN HFETs von DiSanto, D.W., Bolognesi, C.R.

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InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs von Bolognesi, C.R., Dvorak, M.M.W., Yeo, P., Xu, X.G., Watkins, S.P.

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Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs von Tao, N.G., Liu, H.G., Bolognesi, C.R.

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Metamorphic Heterostructure InP/GaAsSb/InP HBTs on GaAs Substrates by MOCVD von Wei Zhou, Chak Wah Tang, Jia Zhu, Kei May Lau, Zeng, Y., Liu, H.G., Tao, N.G., Bolognesi, C.R.

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Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits von Ruiz-Palmero, José M., Hammer, Urs, Jäckel, Heinz, Liu, Honggang, Bolognesi, C.R.

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Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1−x DHBTs von Zeng, Y.P., Ostinelli, O., Liu, H.G., Bolognesi, C.R.

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Heavily carbon-doped GaAsSb grown on InP for HBT applications von Watkins, S.P., Pitts, O.J., Dale, C., Xu, X.G., Dvorak, M.W., Matine, N., Bolognesi, C.R.

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Impact of CBr 4, V/III ratio, temperature and AsH 3 concentration on MOVPE growth of GaAsSb:C von Ostinelli, O., Bolognesi, C.R.

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Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors von Bolognesi, C.R., Caine, E.J., Kroemer, H.

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At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity von DiSanto, D.W., Bolognesi, C.R.

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107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies von Tirelli, S., Marti, D., Haifeng Sun, Alt, A.R., Benedickter, H., Piner, E.L., Bolognesi, C.R.

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Impact of selective Al 2 O 3 passivation on current collapse in AlGaN/GaN HEMTs von Sun, H.F., Bolognesi, C.R.

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Gate-to-drain separation and transistor cutoff frequency in wet etched AlGaN/GaN HFETs von DiSanto, D.W., Kwan, A.C., Bolognesi, C.R.

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High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100mm InP substrates using PH3 and AsH3 von Liu, H.G, Wu, J.Q, Tao, N, Firth, A.V, Griswold, E.M, MacElwee, T.W, Bolognesi, C.R

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