Thermalisation rate study of GaSb-based heterostructures by continuous wave photoluminescence and their potential as hot carrier solar cell absorbers von Le Bris, A, Lombez, L, Laribi, S, Boissier, G, Christol, P, Guillemoles, J-F

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Large inverted band gap in strained three-layer InAs/GaInSb quantum wells von Avogadri, C., Gebert, S., Krishtopenko, S. S., Castillo, I., Consejo, C., Ruffenach, S., Roblin, C., Bray, C., Krupko, Y., Juillaguet, S., Contreras, S., Wolf, A., Hartmann, F., Höfling, S., Boissier, G., Rodriguez, J.-B., Nanot, S., Tournié, E., Teppe, F., Jouault, B.

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Terahertz Spectroscopy of Two-Dimensional Semimetal in Three-Layer InAs/GaSb/InAs Quantum Well von Krishtopenko, S. S., Ruffenach, S., Gonzalez-Posada, F., Consejo, C., Desrat, W., Jouault, B., Knap, W., Fadeev, M. A., Kadykov, A. M., Rumyantsev, V. V., Morozov, S. V., Boissier, G., Tournié, E., Gavrilenko, V. I., Teppe, F.

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Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells von Ruffenach, S., Krishtopenko, S. S., Bovkun, L. S., Ikonnikov, A. V., Marcinkiewicz, M., Consejo, C., Potemski, M., Piot, B., Orlita, M., Semyagin, B. R., Putyato, M. A., Emel’yanov, E. A., Preobrazhenskii, V. V., Knap, W., Gonzalez-Posada, F., Boissier, G., Tournié, E., Teppe, F., Gavrilenko, V. I.

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Experimental observation of whispering gallery modes in sector disk lasers von Monakhov, A. M., Sherstnev, V. V., Astakhova, A. P., Yakovlev, Yu P., Boissier, G., Teissier, R., Baranov, A. N.

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Highly tunable whispering gallery mode semiconductor lasers with controlled absorber von Baranov, A. N., Boissier, G., Teissier, R., Monakhov, A. M., Sherstnev, V. V., Larchenkov, M. I., Yakovlev, Yu P.

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Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 [mu]m wavelength range around room temperature von Naehle, L, Belahsene, S, von Edlinger, M, Fischer, M, Boissier, G, Grech, P, Narcy, G, Vicet, A, Rouillard, Y, Koeth, J, Worschech, L

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GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE von Cerutti, L., Ducanchez, A., Narcy, G., Grech, P., Boissier, G., Garnache, A., Tournié, E., Genty, F.

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Monolithic tunable GaSb-based lasers at 3.3 μm von NAEHLE, L, ZIMMERMANN, C, KAMP, M, WORSCHECH, L, BELAHSENE, S, FISCHER, M, BOISSIER, G, GRECH, P, NARCY, G, LUNDQVIST, S, ROUILLARD, Y, KOETH, J

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Electrically pumped all photonic crystal 2nd order DFB lasers arrays emitting at 2.3 μm von B. Adelin, O. Gauthier-Lafaye, P. Dubreuil, A. Lecestre, Y. Rouillard, M. Bahriz, G. Boissier, A. Vicet, A. Monmayrant

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AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 μm von PERONA, A, GARNACHE, A, CERUTTI, L, DUCANCHEZ, A, MIHINDOU, S, GRECH, P, BOISSIER, G, GENTY, F

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Hole-well antimonide laser diodes on GaSb operating near 2.93 μm von CERUTTI, L, BOISSIER, G, GRECH, P, PERONA, A, ANGELLIER, J, ROUILLARD, Y, KASPI, R, GENTY, F

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Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures von Baranov, A. N., Bertru, N., Cuminal, Y., Boissier, G., Alibert, C., Joullié, A.

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High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 mu m von Yarekha, D A, Glastre, G, Perona, A, Rouillard, Y, Genty, F, Skouri, E M, Boissier, G, Grech, P, Joullie, A, Alibert, C, Baranov, A N

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Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93 μm von Cerutti, L., Boissier, G., Grech, P., Perona, A., Angellier, J., Rouillard, Y., Tournié, E., Genty, F., Dente, G.C., Kaspi, R.

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Edge and vertical surface emitting lasers around 2.0–2.5 μm and their applications von Rouillard, Y., Genty, F., Pérona, A., Vicet, A., Yarekha, D. A., Boissier, G., Grech, P., Baranov, A. N., Alibert, C.

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Thermalisation rate study of GaSb-based heterostructures by continuous wave photoluminescence and their potential as hot carrier solar cell absorbersThis article was submitted as p... von Le Bris, A, Lombez, L, Laribi, S, Boissier, G, Christol, P, Guillemoles, J.-F

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Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy von Bertru, N., Baranov, A. N., Cuminal, Y., Boissier, G., Alibert, C., Joullie, A., Lambert, B.

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Optical transitions and band gap discontinuities of GaInAsSb/AlGaAsSb quantum wells emitting in the 3   μ m range determined by modulation spectroscopy von Motyka, M., Sęk, G., Ryczko, K., Misiewicz, J., Belahsene, S., Boissier, G., Rouillard, Y.

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Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 μm emission von Genty, Frédéric, Almuneau, Guilhem, Chusseau, Laurent, Arnaud Wilk, Gaillard, Serge, Boissier, Guilhem, Grech, Pierre, Jacquet, Joel

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