Relaxation of electrical properties of n-type layers formed by ion milling in epitaxial HgCdTe doped with V-group acceptors von Bogoboyashchyy, V V, Izhnin, I I, Mynbaev, K D, Pociask, M, Vlasov, A P

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The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe von Bogoboyashchyy, V V, Izhnin, I I, Mynbaev, K D

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Time relaxation of point defects in p- and n-(HgCd)Te after ion milling von BELAS, E, BOGOBOYASHCHYY, V. V, GRILL, R, IZHNIN, I. I, VLASOV, A. P, YUDENKOV, V. A

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Mechanisms of conductivity conversion in extrinsically and intrinsically doped p-HgCdTe solid solutions under low energy ion beam milling von Izhnin, I.I., Bogoboyashchyy, V.V., Berchenko, N.N., Yudenkov, V.A.

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Reaction constants for main cationic native defects in narrow-gap Hg1−xCdxTe crystals von Bogoboyashchyy, V.V., Kurbanov, K.R.

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Conversion of conductivity type in Cu-doped Hg0.8Cd0.2Te crystals under ion beam milling von Bogoboyashchyy, V V, Elizarov, A I, Izhnin, I I

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Determination of Hg activity in Hg0.8Cd0.2Te liquid and solid solutions by a quasi-closed-space method von Bogoboyashchyy, V. V., Kurbanov, K. R.

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High temperature arsenic doping of CdHgTe epitaxial layers von Vlasov, A., Bogoboyashchyy, V., Bonchyk, O., Barcz, A.

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Properties of MBE CdxHg1−xTe/GaAs structures modified by ion-beam milling von Bogoboyashchyy, V. V., Dvoretsky, S. A., Izhnin, I. I., Mikhailov, N. N., Sidorov, Yu. G., Sizov, F. F., Varavin, V. S., Yudenkov, V. A.

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Conversion of conductivity type in Cu-doped Hg 0.8 Cd 0.2 Te crystals under ion beam milling von Bogoboyashchyy, V V, Elizarov, A I, Izhnin, I I

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Conduction type conversion in ion etching of Au- and Ag-doped narrow-gap HgCdTe single crystal von Bogoboyashchyy, V. V., Izhnin, I. I., Pociask, M., Mynbaev, K. D., Ivanov-Omskiĭ, V. I.

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The nature of the compositional dependence of p-n junction depth in ion-milled p-HgCdTe von BOGOBOYASHCHYY, V. V, IZHNIN, I. I, MYNBAEV, K. D

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Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg1–xTe von Izhnin, I. I.

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Properties of MBE Cd x Hg 1− x Te/GaAs structures modified by ion‐beam milling von Bogoboyashchyy, V. V., Dvoretsky, S. A., Izhnin, I. I., Mikhailov, N. N., Sidorov, Yu. G., Sizov, F. F., Varavin, V. S., Yudenkov, V. A.

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