Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices von Murray, L.M., Lokovic, K.S., Olson, B.V., Yildirim, A., Boggess, T.F., Prineas, J.P.

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Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice von Olson, B. V., Shaner, E. A., Kim, J. K., Klem, J. F., Hawkins, S. D., Murray, L. M., Prineas, J. P., Flatté, M. E., Boggess, T. F.

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Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux von Koerperick, E.J., Murray, L.M., Norton, D.T., Boggess, T.F., Prineas, J.P.

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Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices von Aytac, Y., Olson, B. V., Kim, J. K., Shaner, E. A., Hawkins, S. D., Klem, J. F., Flatté, M. E., Boggess, T. F.

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Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices von Aytac, Y., Olson, B. V., Kim, J. K., Shaner, E. A., Hawkins, S. D., Klem, J. F., Olesberg, J., Flatté, M. E., Boggess, T. F.

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All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices von Olson, B. V., Murray, L. M., Prineas, J. P., Flatté, M. E., Olesberg, J. T., Boggess, T. F.

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Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices von Aytac, Y., Olson, B. V., Kim, J. K., Shaner, E. A., Hawkins, S. D., Klem, J. F., Flatté, M. E., Boggess, T. F.

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Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon von Muhowski, A.J., Bogh, C.L., Heise, R.L., Boggess, T.F., Prineas, J.P.

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Post growth annealing study on long wavelength infrared InAs/GaSb superlattices von Haugan, H. J., Brown, G. J., Elhamri, S., Pacley, S., Olson, B. V., Boggess, T. F.

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GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 μm device applications von Calvez, S., Hopkins, J.-M., Smith, S.A., Clark, A.H., Macaluso, R., Sun, H.D., Dawson, M.D., Jouhti, T., Pessa, M., Gundogdu, K., Hall, K.C., Boggess, T.F.

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Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs / In ( As , Sb ) Type-II Superlattices von Aytac, Y., Olson, B. V., Kim, J. K., Shaner, E. A., Hawkins, S. D., Klem, J. F., Flatté, M. E., Boggess, T. F.

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A review of optical limiting mechanisms and devices using organics, fullerenes, semiconductors and other materials von Tutt, Lee W., Boggess, Thomas F.

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Auger recombination in narrow-gap semiconductor superlattices incorporating antimony von Grein, C. H., Flatté, M. E., Olesberg, J. T., Anson, S. A., Zhang, L., Boggess, T. F.

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Broadband mid-infrared superlattice light-emitting diodes von Ricker, R. J., Provence, S. R., Norton, D. T., Boggess, T. F., Prineas, J. P.

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n-type anode layer, high-power MWIR superlattice LED von Muhowski, A. J., Ricker, R. J., Boggess, T. F., Prineas, J. P.

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Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys von Olson, B. V., Shaner, E. A., Kim, J. K., Klem, J. F., Hawkins, S. D., Flatté, M. E., Boggess, T. F.

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Simultaneous measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalline silicon von Boggess, T., Bohnert, K., Mansour, K., Moss, S., Boyd, I., Smirl, A.

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Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells von Hall, K. C., Gündoğdu, K., Hicks, J. L., Kocbay, A. N., Flatté, M. E., Boggess, T. F., Holabird, K., Hunter, A., Chow, D. H., Zinck, J. J.

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High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs von Provence, S. R., Ricker, R., Aytac, Y., Boggess, T. F., Prineas, J. P.

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Bias-dependent spin relaxation in a [ 1 1 0 ] -InAs/AlSb 2DES von Hicks, J., Gündoğdu, K., Kocbay, A.N., Hall, K.C., Boggess, T.F., Holabird, K., Hunter, A., Zinck, J.J.

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