Growth of bulk GaN crystals von Kucharski, R., Sochacki, T., Lucznik, B., Bockowski, M.

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Recent progress in basic ammonothermal GaN crystal growth von Grabianska, K., Kucharski, R., Puchalski, A., Sochacki, T., Bockowski, M.

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Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds von Bockowski, M, Iwinska, M, Amilusik, M, Fijalkowski, M, Lucznik, B, Sochacki, T

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Self-compensation of carbon in HVPE-GaN:C von Piotrzkowski, R., Zajac, M., Litwin-Staszewska, E., Bockowski, M.

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Defect-related photoluminescence from ammono GaN von Reshchikov, M. A., Vorobiov, M., Grabianska, K., Zajac, M., Iwinska, M., Bockowski, M.

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Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals von Bockowski, M., Iwinska, M., Amilusik, M., Lucznik, B., Fijalkowski, M., Litwin-Staszewska, E., Piotrzkowski, R., Sochacki, T.

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Micro-Raman studies of strain in bulk GaN crystals grown by hydride vapor phase epitaxy on ammonothermal GaN seeds von Amilusik, M., Wlodarczyk, D., Suchocki, A., Bockowski, M.

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Recent Progress in Crystal Growth of Bulk GaN von Boćkowski, M., Grzegory, I.

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The effect of annealing on photoluminescence from defects in ammonothermal GaN von Reshchikov, M. A., Demchenko, D. O., Ye, D., Andrieiev, O., Vorobiov, M., Grabianska, K., Zajac, M., Nita, P., Iwinska, M., Bockowski, M., McEwen, B., Shahedipour-Sandvik, F.

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Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives von Zajac, M., Kucharski, R., Grabianska, K., Gwardys-Bak, A., Puchalski, A., Wasik, D., Litwin-Staszewska, E., Piotrzkowski, R., Z Domagala, J., Bockowski, M.

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Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation von Huynh, K., Wang, Y., Liao, M. E., Tweedie, J., Reddy, P., Breckenridge, M. H., Collazo, R., Sitar, Z., Sierakowski, K., Bockowski, M., Huang, X., Wojcik, M., Goorsky, M. S.

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Thermal annealing of GaN implanted with Be von Reshchikov, M. A., Andrieiev, O., Vorobiov, M., Ye, D., Demchenko, D. O., Sierakowski, K., Bockowski, M., McEwen, B., Meyers, V., Shahedipour-Sandvik, F.

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Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion von Damilano, B., Aristégui, R., Teisseyre, H., Vézian, S., Guigoz, V., Courville, A., Florea, I., Vennéguès, P., Bockowski, M., Guillet, T., Vladimirova, M.

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A model for Be-related photo-absorption in compensated GaN:Be substrates von Willoughby, W. R., Zvanut, M. E., Dashdorj, J., Bockowski, M.

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Electrical transport properties of highly doped N-type GaN materials von Konczewicz, L, Litwin-Staszewska, E, Zajac, M, Turski, H, Bockowski, M, Schiavon, D, Chlipała, M, Iwinska, M, Nita, P, Juillaguet, S, Contreras, S

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Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor von Singh, A. K., O’Donnell, K. P., Edwards, P. R., Lorenz, K., Kappers, M. J., Boćkowski, M.

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Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates von Zvanut, M. E., Paudel, Subash, Glaser, E. R., Iwinska, M., Sochacki, T., Bockowski, M.

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Charge transfer process for carbon-related center in semi-insulating carbon-doped GaN von Zvanut, M. E., Paudel, Subash, Sunay, U. R., Willoughby, W. R., Iwinska, M., Sochacki, T., Bockowski, M.

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Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates von Domagala, J.Z., Smalc-Koziorowska, J., Iwinska, M., Sochacki, T., Amilusik, M., Lucznik, B., Fijalkowski, M., Kamler, G., Grzegory, I., Kucharski, R., Zajac, M., Bockowski, M.

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Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds von Amilusik, M., Sochacki, T., Fijalkowski, M., Lucznik, B., Iwinska, M., Sidor, A., Teisseyre, H., Domaga a, J., Grzegory, I., Bockowski, M.

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