Eu-Mg defects and donor-acceptor pairs in GaN: photodissociation and the excitation transfer problem von Singh, A K, O'Donnell, K P, Edwards, P R, Lorenz, K, Leach, J H, Bo kowski, M

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Linear piezoelectricity material constants for ammonothermal gallium nitride measured by bulk acoustic waves von Witczak, P, Witczak, Z, Jemielniak, R, Kry ko, M, Krukowski, S, Bo kowski, M

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GaN:Pr3+ nanostructures for red solid state light emission von Rodrigues, J, Ben Sedrine, N, Felizardo, M, Soares, M. J, Alves, E, Neves, A. J, Fellmann, V, Tourbot, G, Auzelle, T, Daudin, B, Bo kowski, M, Lorenz, K, Monteiro, T

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Indirect excitation of Eu3+ in GaN codoped with Mg and Eu von Yamaga, M, Watanabe, H, Kurahashi, M, O'Donnell, K P, Lorenz, K, Bo kowski, M

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Electronic structure of ytterbium-implanted GaN at ambient and high pressure: experimental and crystal field studies von Kaminska, A, Ma, C-G, Brik, M G, Kozanecki, A, Bo kowski, M, Alves, E, Suchocki, A

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High-pressure direct synthesis of aluminium nitride von Boćkowski, M, Łucznik, B, Grzegory, I, Krukowski, S, Wróblewski, M, Porowski, S

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