Optic and acoustic plasmon modes of a semiconductor superlattice von Bloss, W.L.

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Intersubband plasmons of a semiconductor superlattice von Bloss, W.L.

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Collective modes of a superlattice - plasmons, LO phonon-plasmons, and magnetoplasmons von Bloss, W.L., Brody, E.M.

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Plasmon and intersubband modes of a superlattice — classical versus quantum limits von Bloss, W.L.

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Effects of finite layer thickness on superlattice plasmons von Bloss, W.L.

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Plasmon and intersubband modes of a superlattice — Classical versus quantum limits von Bloss, W.L.

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Subthreshold I-V characteristics of AlGaAs/GaAs MODFETs: the role of unintentional acceptors von Krantz, R.J., Bloss, W.L.

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The role of unintentional acceptor concentration on the threshold voltage of modulation-doped field-effect transistors von Krantz, R.J., Bloss, W.L.

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A gate probe method of determining parasitic resistance in MESFET's von Holmstrom, R.P., Bloss, W.L., Chi, J.Y.

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Plasmon modes of a superlattice — Classical vs quantum limits von Bloss, W.L.

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High energy neutron irradiation effects in GaAs modulation-doped field effect transistors (MOSFETs): threshold voltage von Krantz, R.J., Bloss, W.L., O'Loughlin, M.J.

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Effects of finite layer thickness on superlattice plasmons von Bloss, W.L.

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Neutron degradation of the I-V characteristics of AlGaAs/GaAs modulation-doped field-effect transistors von Krantz, R.J., Bloss, W.L., O'Loughlin, M.J.

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Characteristics of GaAs buffered FET logic (BFL) MESFETs and inverters exposed to high-energy neutrons von Rosenbluth, M., Bloss, W.L., Yamada, W.E., Janousek, B.K.

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Characteristics of GaAs heterojunction FETs (HFETs) and source follower FET logic (SFFL) inverters exposed to high energy neutrons von Janousek, B.K., Krantz, R.J., Bloss, W.L., Yamada, W.E., Brown, S., Remke, R.L., Witmer, S.

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Characteristics of GaAs MESFET inverters exposed to high energy neutrons von Bloss, W.L., Yamada, W.E., Young, A.M., Janousek, B.K.

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Neutron radiation effects in GaAs junction field effect transistors von Janousek, B.K., Yamada, W.E., Bloss, W.L.

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Characteristics of GaAs DCFL MESFET's and inverters exposed to high-energy neutrons von Bloss, W.L., Yamada, W.E., Rosenbluth, M.L., Janousek, B.K.

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Dependence of the exciton-polariton photoluminescence lineshape in GaAs on epitaxial layer thickness von Bloss, W.L., Koteles, E.S., Brody, E.M., Sowell, B.J., Salerno, J.P., Gormley, J.V.

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Characteristics of GaAs heterojunction FETs (HFETs) and source follower FET logic (SFFL) inverters exoposed to high energy neutrons von Janousek, B.K., Krantz, R.J., Bloss, W.L., Yamada, W.E., Brown, S., Remke, R.L., Witmer, S.

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