Photovoltaic Ge/SiGe quantum dot mid-infrared photodetector enhanced by surface plasmons von Yakimov, A I, Kirienko, V V, Bloshkin, A A, Armbrister, V A, Dvurechenskii, A V, Hartmann, J-M

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Angle-Selective Photodetection in Ge/Si Quantum Dot Photodiodes Enhanced by Microstructured Hole Arrays von Yakimov, Andrew I., Kirienko, Victor V., Bloshkin, Aleksei A., Utkin, Dmitrii E., Dvurechenskii, Anatoly V.

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Plasmonic Field Enhancement by Metallic Subwave Lattices on Silicon in the Near-Infrared Range von Yakimov, A. I., Bloshkin, A. A., Dvurechenskii, A. V.

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Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures von Timofeev, V A, Nikiforov, A I, Tuktamyshev, A R, Mashanov, V I, Loshkarev, I D, Bloshkin, A A, Gutakovskii, A K

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Studying the morphology, structure and band diagram of thin GeSiSn films and their mid-infrared photoresponse von Timofeev, V, Nikiforov, A, Yakimov, A, Mashanov, V, Loshkarev, I, Bloshkin, A, Kirienko, V, Novikov, V, Kareva, K

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Effect of Adhesive Layers on Photocurrent Enhancement in Near-Infrared Quantum-Dot Photodetectors Coupled with Metal-Nanodisk Arrays von Yakimov, A. I., Kirienko, V. V., Bloshkin, A. A., Dvurechenskii, A. V., Utkin, D. E.

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Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal von Yakimov, A. I., Bloshkin, A. A., Kirienko, V. V., Dvurechenskii, A. V., Utkin, D. E.

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Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region von Bloshkin, A. A., Yakimov, A. I., Dvurechenskii, A. V.

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Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots von Abramkin, Demid S, Petrushkov, Mikhail O, Bogomolov, Dmitrii B, Emelyanov, Eugeny A, Yesin, Mikhail Yu, Vasev, Andrey V, Bloshkin, Alexey A, Koptev, Eugeny S, Putyato, Mikhail A, Atuchin, Victor V, Preobrazhenskii, Valery V

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Phonon bottleneck in p -type Ge/Si quantum dots von Yakimov, A. I., Kirienko, V. V., Armbrister, V. A., Bloshkin, A. A., Dvurechenskii, A. V.

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Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays von Yakimov, Andrew I., Kirienko, Victor V., Bloshkin, Aleksei A., Utkin, Dmitrii E., Dvurechenskii, Anatoly V.

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Emission Enhancement of Ge/Si Quantum Dots in Hybrid Structures with Subwavelength Lattice of Al Nanodisks von Zinovyev, Vladimir A., Smagina, Zhanna V., Zinovieva, Aigul F., Bloshkin, Aleksei A., Dvurechenskii, Anatoly V., Rodyakina, Ekaterina E., Stepikhova, Margarita V., Peretokin, Artem V., Novikov, Alexey V.

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Localization of electrons in dome-shaped GeSi/Si islands von Yakimov, A. I., Kirienko, V. V., Bloshkin, A. A., Armbrister, V. A., Kuchinskaya, P. A., Dvurechenskii, A. V.

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Influence of delta-doping on the performance of Ge/Si quantum-dot mid-infrared photodetectors von Yakimov, A I, Timofeev, V A, Bloshkin, A A, Kirienko, V V, Nikiforov, A I, Dvurechenskii, A V

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Tailoring the optical field enhancement in Si-based structures covered by nanohole arrays in gold films for near-infrared photodetection von Yakimov, A.I., Bloshkin, A.A., Dvurechenskii, A.V.

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Photoconductive gain and quantum efficiency of remotely doped Ge/Si quantum dot photodetectors von Yakimov, A I, Kirienko, V V, Armbrister, V A, Bloshkin, A A, Dvurechenskii, A V, Shklyaev, A A

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Strain-dependent intersubband absorption in the valence band of SiGe quantum wells von Yakimov, A I, Kirienko, V V, Armbrister, V A, Bloshkin, A A

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Valence-band offsets in strained SiGeSn/Si layers with different tin contents von Bloshkin, A. A., Yakimov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Nikiforov, A. I., Murashov, V. V.

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Energy Spectrum of Charge Carriers in Elastically Strained Assemblies of Ge/Si Quantum Dots von Bloshkin, A. A., Yakimov, A. I., Zinovieva, A. F., Zinoviev, V. A., Dvurechenskii, A. V.

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Bonding–antibonding ground-state transition in coupled Ge/Si quantum dots von Yakimov, A I, Bloshkin, A A, Dvurechenskii, A V

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