Atomic scale investigation of Cr precipitation in copper von Chbihi, A., Sauvage, X., Blavette, D.

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Uphill phosphorus diffusion in carbon co-implanted silicon von Dumas, P., Duguay, S., Hilario, F., Gauthier, A., Blavette, D.

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Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography von Blavette, D., Duguay, S.

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Atom probe tomography quantification of carbon in silicon von Dumas, P., Duguay, S., Borrel, J., Hilario, F., Blavette, D.

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Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography von Di Russo, E, Moyon, F, Gogneau, N, Largeau, L, Giraud, E, Carlin, J.-F, Grandjean, N, Chauveau, J. M, Hugues, M, Blum, I, Lefebvre, W, Vurpillot, F, Blavette, D, Rigutti, L

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Modeling of precipitation kinetics in multicomponent systems: Application to model superalloys von Bonvalet, M., Philippe, T., Sauvage, X., Blavette, D.

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Advance in multi-hit detection and quantization in atom probe tomography von Costa, G. Da, Wang, H., Duguay, S., Bostel, A., Blavette, D., Deconihout, B.

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Influence of plastic deformation on the precipitation of Cr in copper von Chbihi, A., Sauvage, X., Blavette, D.

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Phase transformations and γ′ phase stability in model CoAlW superalloys von Azzam, A., Hauet, A., Danoix, F., Philippe, T., Sauvage, X., Blavette, D.

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Design of a femtosecond laser assisted tomographic atom probe von Gault, B., Vurpillot, F., Vella, A., Gilbert, M., Menand, A., Blavette, D., Deconihout, B.

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Trajectory overlaps and local magnification in three-dimensional atom probe von Vurpillot, F., Bostel, A., Blavette, D.

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Minimum free-energy pathway of nucleation von Philippe, T., Blavette, D.

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Detecting Dissociation Dynamics of Phosphorus Molecular Ions by Atom Probe Tomography von Di Russo, E, Blum, I, Rivalta, I, Houard, J, Da Costa, G, Vurpillot, F, Blavette, D, Rigutti, L

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Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques von Grenier, A., Duguay, S., Barnes, J. P., Serra, R., Rolland, N., Audoit, G., Morin, P., Gouraud, P., Cooper, D., Blavette, D., Vurpillot, F.

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3D atomic-scale investigation of carbon segregation in phosphorus co-implanted silicon von Dumas, P., Duguay, S., Borrel, J., Gauthier, A., Ghegin, E., Blavette, D.

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Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling von Dumas, P., Julliard, P.-L., Borrel, J., Duguay, S., Hilario, F., Deprat, F., Lu, V., Zhao, W., Zou, W, Arevalo, E., Blavette, D.

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Kinetic theory of diffusion-limited nucleation von Philippe, T., Bonvalet, M., Blavette, D.

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Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N von Rigutti, L., Mancini, L., Hernández-Maldonado, D., Lefebvre, W., Giraud, E., Butté, R., Carlin, J. F., Grandjean, N., Blavette, D., Vurpillot, F.

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Critical nucleus composition in a multicomponent system von Philippe, T, Blavette, D, Voorhees, P W

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Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes von Di Russo, E., Cherkashin, N., Korytov, M., Nikolaev, A. E., Sakharov, A. V., Tsatsulnikov, A. F., Bonef, B., Blum, I., Houard, J., Da Costa, G., Blavette, D., Rigutti, L.

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