TCAD simulation of ion implantation test for controlling quality of GaAs substrates used for fabricating implanted devices von DEEPAK, BLAKEY, Peter A, JOHNSON, Karl

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Generalized Kushner analysis of RF power amplifiers von Blakey, P.A., Johnson, E.M.

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π/2-mode operation of class E power amplifiers von Blakey, P.A.

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An assessment of approximate nonstationary charge transport models used for GaAs device modeling von Sandborn, P.A., Rao, A., Blakey, P.A.

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Submillimeter wave low-temperature admittance of n-GaAs and n-InP diode structures von KROWNE, C. M, BLAKEY, P. A

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An analytic theory of the impact of velocity overshoot on the drain characteristics of field-effect transistors von Blakey, P.A., Joardar, K.

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Convergence Properties of Fixed-Point Harmonic Balance Algorithms von Blakey, P.A., Bates, S.P.

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Analysis of the linearized energy and momentum balance equations of the single electron gas transport model von LOECHELT, G. H, BLAKEY, P. A, KUNTAL JOARDAR

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Erratum: ‘‘On the existence of submillimeter-wave negative conductance in n -gallium arsenide diodes’’ [J. Appl. Phys. 6 1 , 2257 (1987)] von Krowne, Clifford M., Blakey, Peter A.

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Comments on "Effects of carrier diffusion on the small-signal behavior of IMPATT diodes" von Blakey, P.A.

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Comments on "A Self-Consistent Monte-Carlo Particle Model to Analyze Semiconductor Microcomponents of any Geometry" von Blakey, P.

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The influence of transit-time effects on the optimum design and maximum oscillation frequency of quantum well oscillators von Kesan, V.P., Neikirk, D.P., Blakey, P.A., Streetman, B.G., Linton, T.D.

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Simulation of GaAs IMPATT diodes including energy and velocity transport equations von Mains, R.K., Haddad, G.I., Blakey, P.A.

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On the existence of submillimeter-wave negative conductance in n -gallium arsenide diodes von Krowne, Clifford M., Blakey, Peter A.

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The impact of three-dimensional effects on EEPROM cell performance von Linton, T.D., Blakey, P.A., Neikirk, D.P.

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MESFET simulation oriented toward computer-aided microwave circuit design von Sandborn, P.A., Blakey, P.A.

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A reassessment of TRAPATT theory—I. Charge production and device design von Blakey, Peter A.

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A new transit-time device using quantum-well injection von Kesan, V.P., Neikirk, D.P., Streetman, B.G., Blakey, P.A.

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On the use of Thornber's augmented drift-diffusion equation for modeling GaAs devices von Blakey, P.A., Burdick, S.A., Sandborn, P.A.

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A fast, general three-dimensional device simulator and its application in a submicron EPROM design study von Linton, T.D., Blakey, P.A.

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