Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition von Matys, M., Stoklas, R., Blaho, M., Adamowicz, B.

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Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs von Blaho, M., Gregušová, D., Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., Kuzmík, J.

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Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth von Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmik, J.

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Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors von Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J. -F., Grandjean, N., Kuzmík, J.

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Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics von Blaho, M, Gregušová, D, Haš ík, Š, Seifertová, A, apajna, M, Šoltýs, J, Šatka, A, Nagy, L, Chvála, A, Marek, J, Carlin, J-F, Grandjean, N, Konstantinidis, G, Kuzmík, J

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Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and densi... von Stoklas, R, Gregušová, D, Blaho, M, Fröhlich, K, Novák, J, Matys, M, Yatabe, Z, Kordoš, P, Hashizume, T

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Pancreatic solid focal lesions: autoimmune pancreatitis or pancreatic cancer? von Kunovsky, L., Dite, P., Dolina, J., Kala, Z., Blaho, M., Dvorackova, J., Uvirova, M., Jabandziev, P., Janecek, P., Eid, M., Rohan, T., Maskova, H., Poredska, K., Vaculova, J., Trna, J.

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horizontally polarizing liquid trap enhances the tabanid-capturing efficiency of the classic canopy trap von EGRI, Á, BLAHÓ, M, SZÁZ, D, KRISKA, G, MAJER, J, HERCZEG, T, GYURKOVSZKY, M, FARKAS, R, HORVÁTH, G

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Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization von Dujavová-Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Novotný, I., Križanová, Z., Novák, J.

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Moving current filaments in integrated DMOS transistors under short-duration current stress von Denison, M., Blaho, M., Rodin, P., Dubec, V., Pogany, D., Silber, D., Gornik, E., Stecher, M.

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Moving current filaments in integrated DMOS transistors under short-duration current stress von Denison, M., Blaho, M., Rodin, P., Dubec, V., Pogany, D., Silber, D., Gornik, E., Stecher, M.

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Growth and performance of n++ GaN cap layer for HEMTs applications von Kuzmík, J., Blaho, M., Gregušová, D., Eliáš, P., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Gucmann, F., Zápražný, Z., Dobročka, E., Kyambaki, M., Konstantinidis, G.

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Technology and application of in-situ AlOx layers on III-V semiconductors von Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, M., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I., Dobročka, E., Gregušová, D.

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Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region von Jurkovic, M., Gregusova, D., Palankovski, V., Hascik, Stefan, Blaho, M., Cico, K., Frohlich, K., Carlin, J., Grandjean, N., Kuzmik, J.

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Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment von Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P.

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Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO 2 by atomic layer deposition: leakage current and dens... von Stoklas, R, Gregušová, D, Blaho, M, Fröhlich, K, Novák, J, Matys, M, Yatabe, Z, Kordoš, P, Hashizume, T

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Multiple-time-instant 2D thermal mapping during a single ESD event von DUBEC, V, BYCHIKHIN, S, BLAHO, M, HEER, M, POGANY, D, DENISON, M, JENSEN, N, STECHER, M, GROOS, G, GORNIK, E

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Automated setup for thermal imaging and electrical degradation study of power DMOS devices von Heer, M., Dubec, V., Blaho, M., Bychikhin, S., Pogany, D., Gornik, E., Denison, M., Stecher, M., Groos, G.

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Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al{sub 2}O{sub 3} atomic layer deposition overgrowth von Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Kuzmik, J., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M.

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Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions von Blaho, M., Pogany, D., Zullino, L., Andreini, A., Gornik, E.

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