Diffusion of gallium in cadmium telluride von Blackmore, G.W., Jones, E.D., Mullin, J.B., Stewart, N.M.

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The ageing of Li implants in cadmium mercury telluride von Blackmore, G. W., Courtney, S. J., Astles, M. G., Shaw, N.

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Growth of CdTe-InSb multilayer structures on (100) InSb substrates using molecular beam epitaxy von WILLIAMS, G. M, WHITEHOUSE, C. R, CULLIS, A. G, CHEW, N. G, BLACKMORE, G. W

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Diffusion of arsenic in epitaxial CdxHg1−xTe von Falconer, J.E., Palfrey, H.D., Blackmore, G.W.

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SIMS analysis of epilayers von Holland, R., Blackmore, G.W.

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SIMS depth resolution studies in AlxGa1−xAs using specially grown MBE samples von Houlton, M. R., Blackmore, G. W., Emeny, M. T., Whitehouse, C. R., Chew, A., Sykes, D. E.

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Analysis of cadmium mercury telluride and related materials von Mullin, J.B., Holland, R., Blackmore, G.W., Roberts, J.A., Gale, I.G., Grainger, F., Clegg, J.B.

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SIMS analysis of oxygen in AlxGa1 − xAs alloys: Variations in sensitivity as a function of alloy composition von Chew, A., Sykes, D. E., Houlton, M. R., Blackmore, G. W., Blunt, R. T.

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Boron-segregation in Czochralski-grown CdTe von Blackmore, G.W., Courtney, S.J., Royle, A., Shaw, N., Vere, A.W.

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A structural and compositional analysis of interfaces in ZnSe0.94S0.06 layers grown on to GaAs by OMCVD von COCKAYNE, B, WRIGHT, P. J, BLACKMORE, G. W, WILLIAMS, J. O, NG, T. L

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Application of SIMS to heavy metal tellurides von Holland, R., Blackmore, G. W.

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Epitaxial growth of CdxHg1-xTe by photo-MOVPE von IRVINE, S. J. C, GIESS, J, MULLIN, J. B, BLACKMORE, G. W, DOSSER, O. D

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The chemistry of the growth of ZnS deposited by r.f. sputtering onto cadmium stannate I: The interface von Blackmore, J.M., Blackmore, G.W., Rodway, D.C., Slater, M.J.

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The chemistry of the growth of ZnS deposited by r.f. sputtering onto cadmium stannate II: The bulk von Blackmore, J.M., Blackmore, G.W., Dosser, O.D., Slater, M.J.

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Measurement of impurities in a multi-doped sample of cadmium mercury telluride von CLEGG, J. B, MULLIN, J. B, TIMMINS, K. J, BLACKMORE, G. W, EVERETT, G. L, SNOOK, R

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SIMS profile analyses for Ge-, Co- and Fe-doped InP substrates used in epitaxial growth von COCKAYNE, B, BROWN, G. T, MACEWAN, W. R, BLACKMORE, G. W

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The quantitative application of sims to cadmium mercury telluride von Holland, R, W Blackmore, G

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The growth of high quality CdxHg1−xTe by MOVPE onto GaAs substrates von Giess, J., Gough, J.S., Irvine, S.J.C., Blackmore, G.W., Mullin, J.B., Royle, A.

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Sims analysis of impurities at CMT/CdTe heterostructure interfaces von Tunnicliffe, J., Blackmore, G.W., Irvine, S.J.C., Mullin, J.B., Holland, R.

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The potential for abrupt interfaces in CdxHg1−xTe using thermal and photo-MOVPE von Irvine, S.J.C., Giess, J., Gough, J.S., Blackmore, G.W., Royle, A., Mullin, J.B., Chew, N.G., Cullis, A.G.

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