Modeling and simulation of resistivity of nanometer scale copper von Yarimbiyik, A. Emre, Schafft, Harry A., Allen, Richard A., Zaghloul, Mona E., Blackburn, David L.

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Temperature measurements of semiconductor devices - a review von Blackburn, D.L.

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Nanometre gaps in gold wires are formed by thermal migration von Ramachandran, Ganesh K, Edelstein, Monica D, Blackburn, David L, Suehle, John S, Vogel, Eric M, Richter, Curt A

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Simulating the dynamic electrothermal behavior of power electronic circuits and systems von Hefner, A.R., Blackburn, D.L.

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IC test structures for multilayer interconnect stress determination von Smee, S.A., Gaitan, M., Novotny, D.B., Joshi, Y., Blackburn, D.L.

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An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor von Hefner, Allen R., Blackburn, David L.

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A Performance Trade-Off for the Insulated Gate Bipolar Transistor: Buffer Layer Versus Base Lifetime Reduction von Hefner, Allen R., Blackburn, David L.

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Thermal component models for electrothermal network simulation von Hefner, A.R., Blackburn, D.L.

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Status and trends in power semiconductor devices von Blackburn, D.L.

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Micromachined thermal radiation emitter from a commercial CMOS process von Parameswaran, M., Robinson, A.M., Blackburn, D.L., Gaitan, M., Geist, J.

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Foreword thermal investigations of ICs and microstructures (THERMINIC) von Blackburn, D.L., Courtois, B.

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Turn-Off Failure of Power MOSFET's von Blackburn, David L.

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Resistivity of nanometer-scale films and interconnects: model and simulation von Yarimbiyik, A.E., Schafft, H.A., Allen, R.A., Zaghloul, M.E., Blackburn, D.L.

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Thermal characterization of power transistors von Oettinger, F.F., Blackburn, D.L., Rubin, S.

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An automated photovoltaic system for the measurement of resistivity variations in high-resistivity circular silicon slices / David L. Blackburn, Electron Devices Division, Center f... von Blackburn, David L

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An automated photovoltaic system for the measurement of resistivity variations in high-resistivity circular silicon slices / David L. Blackburn, Electron Devices Division, Center f... von Blackburn, David L

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Safe operating area limits for power transistors / David L. Blackburn : no.400:44 von Blackburn, David L

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Safe operating area limits for power transistors / David L. Blackburn von Blackburn, David L

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Simulating the dynamic electro-thermal behavior of power electronic circuits and systems von Hefner, A.R., Blackburn, D.L.

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Issues in validating package compact thermal models for natural convection cooled electronic systems von Adams, V.H., Blackburn, D.L., Joshi, Y.K., Berning, D.W.

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