Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC(0 0 0 1) von Aı̈t-Mansour, K, Dentel, D, Bischoff, J.L, Kubler, L, Diani, M, Barski, A, Derivaz, M, Noé, P

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The influence of hydrogen during the growth of Ge films on Si(001) by solid source molecular beam epitaxy von Dentel, D, Bischoff, J.L, Angot, T, Kubler, L

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Short human occupations in the Middle Palaeolithic level i of the Abric Romaní rock-shelter (Capellades, Barcelona, Spain) von Vallverdú, J., Allué, E., Bischoff, J.L., Cáceres, I., Carbonell, E., Cebrià, A., García-Antón, D., Huguet, R., Ibáñez, N., Martínez, K., Pastó, I., Rosell, J., Saladié, P., Vaquero, M.

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Surface morphology evolutions during the first stages of epitaxial growth of Si on Ge(0 0 1): a RHEED study von Dentel, D, Bischoff, J.L, Kubler, L, Fauré, J

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The Ge Stranski-Krastanov growth mode on Si(001) (2 × 1) tested by X-ray photoelectron and Auger electron diffraction von Diani, M., Aubel, D., Bischoff, J.L., Kubler, L., Bolmont, D.

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UPS differentiation between molecular NH3 and partially dissociated NH2 fragments adsorbed at low temperature on Si(OO1) surfaces von BISCHOFF, J. L, LUTZ, F, BOLMONT, D, KUBLER, L

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Low temperature basalt alteration by sea water: an experimental study at 70°C and 150°C von Seyfried, W.E., Bischoff, J.L.

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Experimental seawater-basalt interaction at 300°C, 500 bars, chemical exchange, secondary mineral formation and implications for the transport of heavy metals von Seyfried, W.E, Bischoff, J.L

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Thermal nitridation of Si(100)-2×1 surface by NH3: XPS results von BISCHOFF, J. L, KUBLER, L, BOLMONT, D

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Electron cyclotron resonance plasma ion beam effects on the formation of SiC on Si(001) characterized by in-situ photoemission von Diani, M., Aubel, D., Bischoff, J.L., Kubler, L., Bolmont, D.

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Epitaxy relationships between Ge-islands and SiC(0001) von Aït-Mansour, K., Dentel, D., Kubler, L., Diani, M., Bischoff, J.L., Bolmont, D.

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U-series dating of impure carbonates: An isochron technique using total-sample dissolution von Bischoff, James L., Fitzpatrick, John A.

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Heterogeneous Si3n4 growth during SiNx film deposition and thermal nitridation of Si(100) : an X-ray photoemission spectroscopy study von BISCHOFF, J. L, LUTZ, F, BOLMONT, D

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A high-temperature hydrothermal deposit on the seabed at a gulf of California spreading center von Lonsdale, P.F., Bischoff, J.L., Burns, V.M., Kastner, M., Sweeney, R.E.

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Experimental study of boron geochemistry: implications for fluid processes in subduction zones von You, C.F., Spivack, A.J., Gieskes, J.M., Rosenbauer, R., Bischoff, J.L.

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Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth von Simon, L., Louis, P., Pirri, C., Aubel, D., Bischoff, J.L., Kubler, L., Bolmont, D.

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Climate Variability in East-Central California during the Past 1000 Years Reflected by High-Resolution Geochemical and Isotopic Records from Owens Lake Sediments von Li, Hong-Chun, Bischoff, James L., Ku, Teh-Lung, Lund, Steven P., Stott, Lowell D.

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Strain-induced morphology manipulations of Si and Ge-based heterostructures on Si(0 0 1) surfaces von Dentel, D., Aı̈t-Mansour, K., Bischoff, J.L., Kubler, L., Bolmont, D.

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Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1-xGex morphologies : a RHEED and TEM study von DENTEL, D, BISCHOFF, J. L, KUBLER, L, WERCKMANN, J, ROMEO, M

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Surface morphology evolution during Si capping of Ge islands grown on Si(001)-c(4×4) von Aı̈t-Mansour, K., Dentel, D., Bischoff, J. L., Kubler, L.

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