Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy von Kaschner, A., Siegle, H., Kaczmarczyk, G., Straßburg, M., Hoffmann, A., Thomsen, C., Birkle, U., Einfeldt, S., Hommel, D.

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Impact of defects on the carrier transport in GaN von Fehrer, M, Einfeldt, S, Birkle, U, Gollnik, T, Hommel, D

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Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy von Krtschil, A., Witte, H., Lisker, M., Christen, J., Krost, A., Birkle, U., Einfeldt, S., Hommel, D., Scholz, F., Off, J., Stutzmann, M.

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Analysis of deep traps in hexagonal molecular beam epitaxy-grown GaN by admittance spectroscopy von Krtschil, A., Witte, H., Lisker, M., Christen, J., Birkle, U., Einfeldt, S., Hommel, D.

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Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasma sources von Krtschil, A., Witte, H., Lisker, M., Christen, J., Birkle, U., Einfeldt, S., Hommel, D.

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Thermally induced strain in MBE grown GaN layers von Heinke, H, Kirchner, V, Einfeldt, S, Birkle, U, Hommel, D

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Plasma assisted molecular beam epitaxy growth of GaN von Einfeldt, S, Birkle, U, Thomas, C, Fehrer, M, Heinke, H, Hommel, D

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Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy von Krtschil, A, Lisker, M, Witte, H, Christen, J, Birkle, U, Einfeldt, S, Hommel, D

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Defect Complexes in Highly Mg-Doped GaN Studied by Raman Spectroscopy von Kaschner, A., Kaczmarczyk, G., Hoffmann, A., Thomsen, C., Birkle, U., Einfeldt, S., Hommel, D.

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Optical Spectroscopy of Mg- and C-Related Donor and Acceptor Levels in GaN Grown by MBE von Strauf, S., Michler, P., Gutowski, J., Birkle, U., Fehrer, M., Einfeldt, S., Hommel, D.

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Influence of Carbon Doping on the Photoconductivity in GaN Layers von Lisker, M., Krtschil, A., Witte, H., Christen, J., Krost, A., Birkle, U., Einfeldt, S., Hommel, D.

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Influence of Activated Nitrogen on Plasma Assisted MBE Growth of GaN von Einfeldt, S., Hommel, D., Heinke, H., Birkle, U., Thomas, C., Fehrer, M.

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Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride von Birkle, U., Fehrer, M., Kirchner, V., Einfeldt, S., Hommel, D., Strauf, S., Michler, P., Gutowski, J.

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Optical Admittance Spectroscopy of Deep Centers in Galliumnitride - Correlation with Photoluminescence von Krtschil, A., Einfeldt, S., Hommel, D., Witte, Hartmut, Birkle, U., Lisker, M., Christen, J., Fischer, P.

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Ion-induced crystal damage during plasma-assisted MBE growth of GaN layers von Kirchner, V., Heinke, H., Birkle, U., Einfeldt, S., Hommel, D., Selke, H., Ryder, P. L.

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Excitonic transitions in MBE grown h-GaN with cubic inclusions von Strauf, Stefan, Michler, Peter, Gutowski, Jürgen, Selke, Hartmut, Birkle, Udo, Einfeldt, Sven, Hommel, Detlef

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Incorporation of Deep Defects in GaN Induced by Doping and Implantation Processes von Krtschil, A., Witte, H., Lisker, M., Christen, J., Krost, A., Birkle, U., Einfeldt, S., Hommel, D., Wenzel, A., Rauschenbach, B.

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Thermally induced strain in MBE grown GaN layers von HEINKE, H, KIRCHNER, V, EINFELDT, S, BIRKLE, U, HOMMEL, D

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Impact of defects on the carrier transport in GaN von FEHRER, M, EINFELDT, S, BIRKLE, U, GOLLNIK, T, HOMMEL, D

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Influence of Doping on the Lattice Dynamics of Gallium Nitride von Kaschner, A., Siegle, H., Hoffmann, A., Thomsen, C., Birkle, U., Einfeldt, S., Hommel, D.

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