Uprooting defects to enable high-performance III–V optoelectronic devices on silicon von Bioud, Youcef A., Boucherif, Abderraouf, Myronov, Maksym, Soltani, Ali, Patriarche, Gilles, Braidy, Nadi, Jellite, Mourad, Drouin, Dominique, Arès, Richard

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Shape control of cathodized germanium oxide nanoparticles von Bioud, Youcef A., Paradis, Etienne, Boucherif, Abderraouf, Drouin, Dominique, Arès, Richard

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Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs von Bioud, Youcef A., Boucherif, Abderraouf, Belarouci, Ali, Paradis, Etienne, Drouin, Dominique, Arès, Richard

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Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching von Bioud, Youcef A., Boucherif, Abderraouf, Belarouci, Ali, Paradis, Etienne, Fafard, Simon, Aimez, Vincent, Drouin, Dominique, Arès, Richard

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Tunable conductivity in mesoporous germanium von Beattie, Meghan N, Bioud, Youcef A, Hobson, David G, Boucherif, Abderraouf, Valdivia, Christopher E, Drouin, Dominique, Arès, Richard, Hinzer, Karin

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Dynamic formation of spherical voids crossing linear defects von Bioud, Youcef A, Rondeau, Maxime, Boucherif, Abderraouf, Patriarche, Gilles, Drouin, Dominique, Arès, Richard

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Effect of sintering germanium epilayers on dislocation dynamics: From theory to experimental observation von Bioud, Youcef.A., Rondeau, Maxime, Boucherif, Abderraouf, Patriarche, Gilles, Drouin, Dominique, Arès, Richard

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Engineering dislocations and nanovoids for high-efficiency III–V photovoltaic cells on silicon von Bioud, Youcef A., Boucherif, Abderraouf, Patriarche, Gilles, Drouin, Dominique, Arès, Richard

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Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids von Bioud, Youcef A, Boucherif, Abderraouf, Paradis, Etienne, Soltani, Ali, Drouin, Dominique, Arès, Richard

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Dynamic formation of spherical voids crossing linear defects von Bioud, Youcef A, Rondeau, Maxime, Boucherif, Abderraouf, Patriarche, Gilles, Drouin, Dominique, Arès, Richard

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Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids von Bioud, Youcef A, Boucherif, Abderraouf, Paradis, Etienne, Soltani, Ali, Drouin, Dominique, Arès, Richard

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Voided Ge/Si Platform to Integrate III-V Materials on Si von Bioud, Youcef Ataellah, Boucherif, Abderraouf, Myronov, Maksym, Patriarche, Gilles, Drouin, Dominique, Arès, Richard

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Capturing the Effects of Free Surfaces on Threading Dislocation Density Reduction von Bioud, Youcef Ataellah, Boucherif, Abderraouf, Patriarche, Gilles, Drouin, Dominique, Arès, Richard

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Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy von Kolhatkar, Gitanjali, Boucherif, Abderraouf, Ataellah Bioud, Youcef, Fafard, Simon, Ruediger, Andreas, Aimez, Vincent, Arès, Richard

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SUBSTRATES FOR OPTOELECTRONIC DEVICES AND METHODS OF MANUFACTURING SAME von BIOUD, Youcef Ataellah, BOUCHERIF, Abderraouf, ARÈS, Richard

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SUBSTRATES FOR OPTOELECTRONIC DEVICES AND METHODS OF MANUFACTURING SAME von BIOUD, Youcef Ataellah, BOUCHERIF, Abderraouf, ARÈS, Richard

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Capturing the Effects of Free Surfaces on Threading Dislocation Density Reduction von Bioud, Youcef Ataellah, Boucherif, Abderraouf, Patriarche, Gilles, Drouin, Dominique, Arès, Richard

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