Optimal DC-Segmentation for Multi-Infeed HVDC Systems Based on Stability Performance von Cheng, Binjie, Xu, Zheng, Xu, Wei

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FinFET Centric Variability-Aware Compact Model Extraction and Generation Technology Supporting DTCO von Xingsheng Wang, Binjie Cheng, Reid, David, Pender, Andrew, Asenov, Plamen, Millar, Campbell, Asenov, Asen

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Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions von Markov, S., Binjie Cheng, Asenov, A.

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A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology von Xiaobo Jiang, Shaofeng Guo, Runsheng Wang, Xingsheng Wang, Binjie Cheng, Asenov, Asen, Ru Huang

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Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis von Xingsheng Wang, Adamu-Lema, Fikru, Binjie Cheng, Asenov, Asen

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Interplay Between Process-Induced and Statistical Variability in 14-nm CMOS Technology Double-Gate SOI FinFETs von Xingsheng Wang, Binjie Cheng, Brown, Andrew Robert, Millar, Campbell, Kuang, Jente B., Nassif, Sani, Asenov, Asen

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Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM von Navarro, Carlos, Lacord, Joris, Singh Parihar, Mukta, Adamu-Lema, Fikru, Meng Duan, Rodriguez, Noel, Binjie Cheng, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Wells, Paul, Yong-Tae Kim, Asenov, Asen, Cristoloveanu, Sorin, Gamiz, Francisco

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Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs von Liping Wang, Brown, Andrew R., Nedjalkov, Mihail, Alexander, Craig, Cheng, Binjie, Millar, Campbell, Asenov, Asen

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Impact of NBTI/PBTI on SRAM Stability Degradation von Binjie Cheng, Brown, Andrew R, Asenov, Asen

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Accurate Simulation of Transistor-Level Variability for the Purposes of TCAD-Based Device-Technology Cooptimization von Gerrer, Louis, Brown, Andrew R., Millar, Campbell, Hussin, Razaidi, Amoroso, Salvatore Maria, Binjie Cheng, Reid, Dave, Alexander, Craig, Fried, David, Hargrove, Michael, Greiner, Ken, Asenov, Asen

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Predictive Simulation and Benchmarking of Si and Ge pMOS FinFETs for Future CMOS Technology von Shifren, Lucian, Aitken, Robert, Brown, Andrew R., Chandra, Vikas, Binjie Cheng, Riddet, Craig, Alexander, Craig L., Cline, Brian, Millar, Campbell, Sinha, Saurabh, Yeric, Greg, Asenov, Asen

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Hierarchical Simulation of Statistical Variability: From 3-D MC With " ab initio" Ionized Impurity Scattering to Statistical Compact Models von Kovac, Urban, Alexander, Craig, Roy, Gareth, Riddet, Craig, Binjie Cheng, Asenov, Asen

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Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs von Liping Wang, Brown, Andrew R., Cheng, Binjie, Asenov, Asen

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Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX von Yunxiang Yang, Markov, S., Binjie Cheng, Zain, A. S. M., Xiaoyan Liu, Asen Cheng

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Performance and Variability of Doped Multithreshold FinFETs for 10-nm CMOS von Adamu-Lema, Fikru, Xingsheng Wang, Amoroso, Salvatore Maria, Riddet, Craig, Binjie Cheng, Shifren, Lucian, Aitken, Robert, Sinha, Saurahb, Yeric, Greg, Asenov, Asen

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New Assessment Methodology Based on Energy-Delay-Yield Cooptimization for Nanoscale CMOS Technology von Jiang, Xiaobo, Wang, Junyao, Wang, Xingsheng, Wang, Runsheng, Cheng, Binjie, Asenov, Asen, Wei, Lan, Huang, Ru

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FET as Capacitor-Less eDRAM Cell For High-Density Integration von Navarro, Carlos, Meng Duan, Singh Parihar, Mukta, Adamu-Lema, Fikru, Coseman, Stefan, Lacord, Joris, Kyunghwa Lee, Sampedro, Carlos, Binjie Cheng, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Seong-Il Kim, Cristoloveanu, Sorin, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Riel, Heike, Wells, Paul, Yong-Tae Kim, Asenov, Asen, Gamiz, Francisco

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A Brief Analysis on the Protection and Development of Daci Temple Area in Chengdu von Cheng, Binjie

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Comprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET von ANIS SUHAILA MOHD ZAIN, MARKOV, Stanislav, BINJIE CHENG, ASENOV, Asen

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Drain bias effects on statistical variability and reliability and related subthreshold variability in 20-nm bulk planar MOSFETs von Wang, Xingsheng, Brown, Andrew R., Cheng, Binjie, Roy, Scott, Asenov, Asen

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