Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates von Storm, D.F., Deen, D.A., Katzer, D.S., Meyer, D.J., Binari, S.C., Gougousi, T., Paskova, T., Preble, E.A., Evans, K.R., Smith, David J.

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Trapping effects and microwave power performance in AlGaN/GaN HEMTs von Binari, S.C., Ikossi, K., Roussos, J.A., Kruppa, W., Doewon Park, Dietrich, H.B., Koleske, D.D., Wickenden, A.E., Henry, R.L.

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Experimental investigation of microchannel coolers for the high heat flux thermal management of GaN-on-SiC semiconductor devices von Calame, J.P., Myers, R.E., Binari, S.C., Wood, F.N., Garven, M.

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Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy von Klein, P. B., Binari, S. C., Ikossi, K., Wickenden, A. E., Koleske, D. D., Henry, R. L.

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Electrical characterization of Schottky contacts to N-polar GaN von Downey, B.P., Meyer, D.J., Katzer, D.S., Storm, D.F., Binari, S.C.

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Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures von Deen, D.A., Storm, D.F., Katzer, D.S., Meyer, D.J., Binari, S.C.

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Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors von Klein, P B, Binari, S C

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Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors von Klein, P. B., Freitas, J. A., Binari, S. C., Wickenden, A. E.

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AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization von Storm, D.F., Katzer, D.S., Roussos, J.A., Mittereder, J.A., Bass, R., Binari, S.C., Hanser, D., Preble, E.A., Evans, K.R.

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Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures von Storm, D.F., Katzer, D.S., Deen, D.A., Bass, R., Meyer, D.J., Roussos, J.A., Binari, S.C., Paskova, T., Preble, E.A., Evans, K.R.

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A cat's eye multiple quantum-well modulating retro-reflector von Rabinovich, W.S., Mahon, R., Goetz, P.G., Waluschka, E., Katzer, D.S., Binari, S.C., Gilbreath, G.C.

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A surface-normal coupled-quantum-well modulator at 1.55 μm von Stievater, T.H., Rabinovich, W.S., Goetz, P.G., Mahon, R., Binari, S.C.

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Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress von Mittereder, J. A., Binari, S. C., Klein, P. B., Roussos, J. A., Katzer, D. S., Storm, D. F., Koleske, D. D., Wickenden, A. E., Henry, R. L.

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Trapping effects in GaN and SiC microwave FETs von Binari, S.C., Klein, P.B., Kazior, T.E.

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Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates von STORM, D. F, ROUSSOS, J. A, KATZER, D. S, MITTEREDER, J. A, BASS, R, BINARI, S. C, HANSER, D, PREBLE, E. A, EVANS, K

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Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications von Storm, D.F., Katzer, D.S., Mittereder, J.A., Binari, S.C., Shanabrook, B.V., Xu, X., McVey, D.S., Vaudo, R.P., Brandes, G.R.

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Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates von Storm, D.F., Katzer, D.S., Roussos, J.A., Mittereder, J.A., Bass, R., Binari, S.C., Zhou, Lin, Smith, David J., Hanser, D., Preble, E.A., Evans, K.R.

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Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors von Klein, P. B., Binari, S. C., Freitas, J. A., Wickenden, A. E.

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Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors von Deen, D. A., Storm, D. F., Bass, R., Meyer, D. J., Katzer, D. S., Binari, S. C., Lacis, J. W., Gougousi, T.

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Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs von Katzer, D.S., Storm, D.F., Binari, S.C., Roussos, J.A., Shanabrook, B.V., Glaser, E.R.

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