Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications von Sanghun Jeon, Walker, F.J., Billman, C.A., McKee, R.A., Hyunsang Hwang

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A study of charge trapping in PECVD PTEOS films von Lenahan, P.M., Billman, C.A., Fuller, R., Evans, H., Speece, W.H., DeCrosta, D., Lowry, R.

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Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs von Billman, C.A., Lenahan, P.M., Weber, W.

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Process integration of an interlevel dielectric (ILDO) module using a building-in reliability approach von Paulsen, R.E., Kyono, C.S., Wang, Y., Klein, K.M., Lim, I.-S., Tinkler, S., Bellamak, B., Odle, D.W., Zhou, Z., Dahl, P., Giovanetto, M., Makwana, J., Patel, S., Reno, C., Lenahan, P.M., Billman, C.A.

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Electrical characteristics of epitaxially grown SrTiO 3 on silicon for metal-insulator-semiconductor gate dielectric applications von Sanghun Jeon, Walker, F.J., Billman, C.A., McKee, R.A., Hyunsang Hwang

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Lateral Extended Drain Transistor Reliability Dependence on Lithography CD Variation von Thomason, M., Belisle, C., Billman, C.A., Williams, B.

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Lithography CD Variation effects on LFNDMOS Transistor Hot-Carrier Degradation von Thomason, M., Billman, C.A., Greenwood, B., Williams, B., Belisle, C., Bauwens, F.

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High-K Candidates for Use as the Gate Dielectric in Silicon Mosfets von Schlom, D.G., Billman, C.A., Haeni, J.H., Lettieri, J., Tan, P.H., Held, R.R.M., Völk, S., Hubbard, K.J.

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Epitaxial SrTiO3 on silicon with EOT of 5.4 /spl Aring/ for MOS gate dielectric applications von Sanghun Jeon, Walker, F.J., Billman, C.A., McKee, R.A., Hyunsang Hwang

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