Misfit dislocations in GaAs heteroepitaxy on (001) Si von Gerthsen, D., Biegelsen, D.K., Ponce, F.A., Tramontana, J.C.

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Defect states in Ge chalcogenides observed by photoluminescence and ESR von Street, R.A., Biegelsen, D.K.

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Distribution of recombination lifetimes in amorphous silicon von Street, R.A., Biegelsen, D.K.

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Single-crystal silicon transistors in laser-crystallized thin films on bulk glass von Johnson, N.M., Biegelsen, D.K., Tuan, H.C., Moyer, M.D., Fennell, L.E.

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Density of gap states of silicon grain boundaries determined by optical absorption von JACKSON, W. B, JOHNSON, N. M, BIEGELSEN, D. K

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Simple ion milling preparation of tungsten tips von BIEGELSEN, D. K, PONCE, F. A, TRAMONTANA, J. C

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Luminescence and ESR studies of defects in hydrogenated amorphous silicon von Street, R.A, Biegelsen, D.K

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Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon von Jackson, W. B., Biegelsen, D. K., Nemanich, R. J., Knights, J. C.

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Heteroepitaxial growth of polar semiconductors on non-polar substrates von Biegelsen, D.K., Bringans, R.D., Northrup, J.E.

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Explanation of light induced ESR in a-Si:H; dangling bonds with a positive correlation energy von Street, R.A., Biegelsen, D.K.

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Constrained optimization based control of real time large-scale systems: airjet object movement system von Jackson, W.B., Fromherz, M.P.J., Biegelsen, D.K., Reich, J., Goldberg, D.

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Optically induced electron spin resonance in doped amorphous silicon von Knights, J.C., Biegelsen, D.K., Solomon, I.

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Microstrain in laser-crystallized silicon islands on fused silica von Lyon, S. A., Nemanich, R. J., Johnson, N. M., Biegelsen, D. K.

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Defect Generation in the Initial Stages of Epitaxial Growth of GaAs on Silicon by MBE von Tramontana, J.C., Biegelsen, D.K., Ponce, F.A., Smith, A.J.

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Detailed investigation of doping in hydrogenated amorphous silicon and germanium von STUTZMANN, M, BIEGELSEN, D. K, STREET, R. A

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Spin-lattice relaxation of paramagnetic states in a-Si:H and a-Ge:H von Biegelsen, D.K., Stutzmann, M.

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An ultrasonic technique for measuring the absolute signs of photoelastic coefficients and its application to fused silica and cadmium molybdate von Biegelsen, D.K.

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Defect creation and hydrogen evolution in amorphous Si:H von Biegelsen, D.K, Street, R.A, Tsai, C.C, Knights, J.C

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Deep recombination centers in a-Si:H von Biegelsen, D.K., Street, R.A., Jackson, W.A., Weisfield, R.L.

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Electron spin resonance measurements on amorphous silicon von Biegelsen, D.K.

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