Bulk AlN growth by physical vapour transport von Hartmann, C, Dittmar, A, Wollweber, J, Bickermann, M

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Favourable growth conditions for the preparation of bulk AlN single crystals by PVT von Hartmann, C, Matiwe, L, Wollweber, J, Gamov, I, Irmscher, K, Bickermann, M, Straubinger, T

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Shallow donor and DX states of Si in AlN von Son, N. T., Bickermann, M., Janzén, E.

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Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices von Hartmann, C, Wollweber, J, Sintonen, S, Dittmar, A, Kirste, L, Kollowa, S, Irmscher, K, Bickermann, M

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Carbon pair defects in aluminum nitride von Gamov, I., Hartmann, C., Wollweber, J., Dittmar, A., Straubinger, T., Bickermann, M., Kogut, I., Fritze, H., Irmscher, K.

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Melt growth and properties of bulk BaSnO3 single crystals von Galazka, Z, Uecker, R, Irmscher, K, Klimm, D, Bertram, R, Kwasniewski, A, Naumann, M, Schewski, R, Pietsch, M, Juda, U, Fiedler, A, Albrecht, M, Ganschow, S, Markurt, T, Guguschev, C, Bickermann, M

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Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride von Irmscher, K., Hartmann, C., Guguschev, C., Pietsch, M., Wollweber, J., Bickermann, M.

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AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy von Walde, S., Hagedorn, S., Coulon, P.-M., Mogilatenko, A., Netzel, C., Weinrich, J., Susilo, N., Ziffer, E., Matiwe, L., Hartmann, C., Kusch, G., Alasmari, A., Naresh-Kumar, G., Trager-Cowan, C., Wernicke, T., Straubinger, T., Bickermann, M., Martin, R.W., Shields, P.A., Kneissl, M., Weyers, M.

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Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN von Mogilatenko, A., Knauer, A., Zeimer, U., Netzel, C., Jeschke, J., Unger, R.-S., Hartmann, C., Wollweber, J., Dittmar, A., Juda, U., Weyers, M., Bickermann, M.

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Crystal growth and characterization of the pyrochlore Tb2Ti2O7 von Klimm, D, Guguschev, C, Kok, D. J, Naumann, M, Ackermann, L, Rytz, D, Peltz, M, Dupré, K, Neumann, M. D, Kwasniewski, A, Schlom, D. G, Bickermann, M

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Effects of growth direction and polarity on bulk aluminum nitride crystal properties von Filip, O., Epelbaum, B.M., Bickermann, M., Heimann, P., Winnacker, A.

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Czochralski growth and characterization of cerium doped calcium scandate von Guguschev, C, Philippen, J, Kok, D. J, Markurt, T, Klimm, D, Hinrichs, K, Uecker, R, Bertram, R, Bickermann, M

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Similarities and differences in sublimation growth of SiC and AlN von Epelbaum, B.M., Bickermann, M., Nagata, S., Heimann, P., Filip, O., Winnacker, A.

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Wet KOH etching of freestanding AlN single crystals von Bickermann, M., Schmidt, S., Epelbaum, B.M., Heimann, P., Nagata, S., Winnacker, A.

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Growth of bulk AlN single crystals with low oxygen content taking into account thermal and kinetic effects of oxygen-related gaseous species von Guguschev, C., Dittmar, A., Moukhina, E., Hartmann, C., Golka, S., Wollweber, J., Bickermann, M., Fornari, R.

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Characterization of bulk AlN with low oxygen content von Bickermann, M., Epelbaum, B.M., Winnacker, A.

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Structural properties of aluminum nitride bulk single crystals grown by PVT von Bickermann, M., Epelbaum, B. M., Filip, O., Heimann, P., Nagata, S., Winnacker, A.

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Determination of charge carrier concentration in n - and p -doped SiC based on optical absorption measurements von Weingärtner, R., Wellmann, P. J., Bickermann, M., Hofmann, D., Straubinger, T. L., Winnacker, A.

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Natural growth habit of bulk AlN crystals von Epelbaum, B.M., Seitz, C., Magerl, A., Bickermann, M., Winnacker, A.

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Micropipe healing in SiC wafers by liquid-phase epitaxy in Si–Ge melts von Filip, O., Epelbaum, B., Bickermann, M., Winnacker, A.

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