Effect of growth conditions on the GaN thin film by sputtering deposition von Zhang, C.G., Bian, L.F., Chen, W.D., Hsu, C.C.

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Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique von Zhang, C.G., Chen, W.D., Bian, L.F., Song, S.F., Hsu, C.C.

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Solid-state tellurium doping of AllnP and its application to photovoltaic devices grown by molecular beam epitaxy von Dai, P, Tan, M, Wu, Y Y, Ji, L, Bian, L F, Lu, S L, Yang, H

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Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering von Zhang, C.G., Bian, L.F., Chen, W.D., Hsu, C.C.

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Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates von Bian, L.F., Jiang, D.S., Tan, P.H., Lu, S.L., Sun, B.Q., Li, L.H., Harmand, J.C.

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Preparation and electrical conductivity of BaZr0.8Y0.2O3-δ/(ZrO2)0.92(Y2O3)0.08 proton/oxygen ion conducting composite ceramic von Luo, X. Y., Meng, B., Zhao, M. Y., Xie, H., Bian, L. F., Yang, X.

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Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge von Chen, J. X., He, W., Jia, S. P., Jiang, D. S., Lu, S. L., Bian, L. F., Yang, H.

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The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures von Jahn, U, Musolino, M, Lähnemann, J, Dogan, P, Garrido, S Fernández, Wang, J F, Xu, K, Cai, D, Bian, L F, Gong, X J, Yang, H

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Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells von Bian, L.F., Jiang, D.S., Lu, S.L.

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Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells von Jiang, D.S, Bian, L.F, Liang, X.G, Chang, K, Sun, B.Q, Johnson, S, Zhang, Y.H

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Localized and free exciton spin relaxation dynamics in GaInNAs∕GaAs quantum well von Lu, S. L., Bian, L. F., Uesugi, M., Nosho, H., Tackeuchi, A., Niu, Z. C.

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The effects of rapid thermal annealing on the optical properties of Zn1−xMnxSe epilayer grown by MOCVD on GaAs substrate von Lu, S.L., Wang, J.N., Huang, J.S., Bian, L.F., Jiang, D.S., Yang, C.L., Dai, J.M., Ge, W.K., Wang, Y.Q., Zhang, J.Y., Shen, D.Z.

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Grain size effect on the electrical conductivity of submicron Sm-heavily-doped ceria von Chen, Q.B., Meng, B., Zhao, M.Y., Xie, H., Bian, L.F., Yang, X.

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Solid-state tellurium doping of AlInP and its application to photovoltaic devices grown by molecular beam epitaxy von Dai, P., Tan, M., Wu, Y.Y., Ji, L., Bian, L.F., Lu, S.L., Yang, H.

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High-indium-content InxGa1−xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature von Ni, H. Q., Niu, Z. C., Xu, X. H., Xu, Y. Q., Zhang, W., Wei, X., Bian, L. F., He, Z. H., Han, Q., Wu, R. H.

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The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well von Bian, L.F., Jiang, D.S., Lu, S.L., Huang, J.S., Chang, K., Li, L.H., Harmand, J.C.

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Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers von Jahn, U., Brandt, O., Luna, E., Sun, X., Wang, H., Jiang, D. S., Bian, L. F., Yang, H.

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Pain Prevalence and Management in a General Hospital Through Repeated Cross-Sectional Surveys in 2011 and 2021 von Zhan, Dong-Di, Bian, Li-Fang, Zhang, Mei-Yun

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Correlation between Er3+ emission and Si clusters in Erbium-doped a-SiOx:H films von CHEN, C. Y, CHEN, W. D, SONG, S. F, XU, Z. J, LIAO, X. B, LI, Guo-Hua, BIAN, L. F, KUN DING

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Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures von Jahn, U, Musolino, M, Lähnemann, J, Dogan, P, S Fernández Garrido, Wang, J F, K Xu, Cai, D, Bian, L F, Gong, X J, Yang, H

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