Bowing parameter of the band-gap energy of GaNxAs1−x von Bi, W. G., Tu, C. W.

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Catalyzing Carbonization of Polypropylene Itself by Supported Nickel Catalyst during Combustion of Polypropylene/Clay Nanocomposite for Improving Fire Retardancy von Tang, Tao, Chen, Xuecheng, Chen, Hui, Meng, Xiaoyu, Jiang, Zhiwei, Bi, Wuguo

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Growth and characterization of InNxAsyP1−x−y/InP strained quantum well structures von Bi, W. G., Tu, C. W.

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High quality CuInSe2 films grown on pseudo-lattice-matched substrates by molecular beam epitaxy von Niki, S., Fons, P. J., Yamada, A., Kurafuji, T., Chichibu, S., Nakanishi, H., Bi, W. G., Tu, C. W.

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A scanning tunneling microscopy study of atomic-scale clustering in InAsP/InP heterostructures von Zuo, S. L., Bi, W. G., Tu, C. W., Yu, E. T.

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Nanofabrication of 1-D photonic bandgap structures along a photonic wire von Zhang, J.P., Chu, D.Y., Wu, S.L., Bi, W.G., Tiberio, R.C., Joseph, R.M., Taflove, A., Tu, C.W., Ho, S.T.

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A novel material for long-wavelength lasers: InNAsP von Tu, C.W., Bi, W.G., Ma, Y., Zhang, J.P., Wang, L.W., Ho, S.T.

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N incorporation in GaNxP1 − x and InNxP1 − x using a RF N plasma source von Bi, W.G., Tu, C.W.

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Intrinsic Doping: A New Approach for n-Type Modulation Doping in InP-Based Heterostructures von Chen, WM, Buyanova, IA, Buyanov, AV, Lundström, T, Bi, WG, Tu, CW

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Directional light output from photonic-wire microcavity semiconductor lasers von Zhang, J.P., Chu, D.Y., Wu, S.L., Bi, W.G., Tiberio, R.C., Tu, C.W., Ho, S.T.

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Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures von Buyanova, I. A., Chen, W. M., Bi, W. G., Zeng, Y. P., Tu, C. W.

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Buried-mesa avalanche photodiodes von Hasnain, G., Bi, W.G., Song, S., Anderson, J.T., Moll, N., Chung-Yi Su, Hollenhorst, J.N., Baynes, N.D., Athroll, I., Amos, S., Ash, R.M.

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Gas-source molecular beam epitaxial growth and characterization of InNxP1−x on InP von Bi, W. G., Tu, C. W.

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Growth studies of GaP on Si by gas-source molecular beam epitaxy von Bi, W.G., Mei, X.B., Tu, C.W.

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Nanometer-scale compositional variations in III-V semiconductor heterostructures characterized by scanning tunneling microscopy von Yu, E. T., Zuo, S. L., Bi, W. G., Tu, C. W., Allerman, A. A., Biefeld, R. M.

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Optical detection of quantum oscillations in InP/InGaAs quantum structures von Buyanova, I. A., Chen, W. M., Buyanov, A. V., Bi, W. G., Tu, C. W.

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In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic von Li, N. Y., Hsin, Y. M., Bi, W. G., Asbeck, P. M., Tu, C. W.

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Photonic-wire laser von Zhang, JP, Chu, DY, Wu, SL, Ho, ST, Bi, WG, Tu, CW, Tiberio, RC

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Highly strained InxGa1-xP/GaP quantum wells grown on GaP and on an Inx/2Ga1-x/2P buffer layer by gas-source molecular beam epitaxy von BI, W. G, TU, C. W

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Intrinsic modulation doping in InP-based structures: properties relevant to device applications von Buyanova, I.A, Chen, W.M, Bi, W.G, Zeng, Y.P, Tu, C.W

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