Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating von Perera, Meeghage Madusanka, Lin, Ming-Wei, Chuang, Hsun-Jen, Chamlagain, Bhim Prasad, Wang, Chongyu, Tan, Xuebin, Cheng, Mark Ming-Cheng, Tománek, David, Zhou, Zhixian

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Improved Carrier Mobility in Few-Layer MoS 2 Field-Effect Transistors with Ionic-Liquid Gating von Perera, Meeghage Madusanka, Lin, Ming-Wei, Chuang, Hsun-Jen, Chamlagain, Bhim Prasad, Wang, Chongyu, Tan, Xuebin, Cheng, Mark Ming-Cheng, Tománek, David, Zhou, Zhixian

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Improved Carrier Mobility in Few-Layer MoS sub(2) Field-Effect Transistors with Ionic-Liquid Gating von Perera, Meeghage Madusanka, Lin, Ming-Wei, Chuang, Hsun-Jen, Chamlagain, Bhim Prasad, Wang, Chongyu, Tan, Xuebin, Cheng, Mark Ming-Cheng, Tomanek, David, Zhou, Zhixian

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Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating von Perera, Meeghage Madusanka, Lin, Ming-Wei, Chuang, Hsun-Jen, Chamlagain, Bhim Prasad, Wang, Chongyu, Tan, Xuebin, Cheng, Mark Ming-Cheng, Tománek, David, Zhou, Zhixian

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Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating von Perera, Meeghage Madusanka, Ming-Wei, Lin, Chuang, Hsun-Jen, Bhim Prasad Chamlagain, Wang, Chongyu, Tan, Xuebin, Mark Ming-Cheng Cheng, Tománek, David, Zhou, Zhixian

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