Semi-classical Monte Carlo study of the impact of tensile strain on the performance limits of monolayer MoS2 n-channel MOSFETs von Bhatti, Aqyan A., Archer, Branch T., Navlakha, Nupur, Register, Leonard F., Banerjee, Sanjay K.

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Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0.53Ga0.47As n-channel FinFETs von Bhatti, Aqyan A., Crum, Dax M., Valsaraj, Amithraj, Register, Leonard F., Banerjee, Sanjay K.

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First-principles simulation of oxygen vacancy migration in HfOx, CeOx, and at their interfaces for applications in resistive random-access memories von Bhatti, Aqyan A., Hsieh, Cheng-Chih, Roy, Anupam, Register, Leonard F., Banerjee, Sanjay K.

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First-principles simulation of oxygen vacancy migration in $$\hbox {HfO}_{ x}$$, $$\hbox {CeO}_{ x}$$, and at their interfaces for applications in resistive random-access memories von Bhatti, Aqyan A., Hsieh, Cheng-Chih, Roy, Anupam, Register, Leonard F., Banerjee, Sanjay K.

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First-principles simulation of oxygen vacancy migration in \(\hbox {HfO}_{ x}\), \(\hbox {CeO}_{ x}\), and at their interfaces for applications in resistive random-access memories von Bhatti, Aqyan A, Hsieh, Cheng-Chih, Roy, Anupam, Register, Leonard F, Banerjee, Sanjay K

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Semi-Classical Monte Carlo Simulation of Contact Geometry, Orientation, and Ideality on Nano-scale Si and III-V n-channel FinFETs in the Quasi-Ballistic Limit von Bhatti, Aqyan A, Crum, Dax M, Valsaraj, Amith, Register, Leonard F, Banerjee, Sanjay K

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Monte Carlo Study of Si, Ge, and In0.53Ga0.47As n-Channel FinFET Scaling: Channel Orientation, Quantum Confinement, Doping, and Contacts von Bhatti, Aqyan A., Navlakha, Nupur, Crum, Dax M., Banerjee, Sanjay K., Register, Leonard F.

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