Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS single-atom transistor by RMS noise analysis von Bigoni, Stefano, Tagliaferri, Marco L. V., Tamascelli, Dario, Strangio, Sebastiano, Bez, Roberto, Organtini, Paolo, Ferrari, Giorgio, Prati, Enrico

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Non-volatile memory technologies: emerging concepts and new materials von Bez, Roberto, Pirovano, Agostino

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The Design of Rewritable Ultrahigh Density Scanning-Probe Phase-Change Memories von Wright, C. D., Wang, L., Shah, P., Aziz, M. M., Varesi, E., Bez, R., Moroni, M., Cazzaniga, F.

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Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories von Boniardi, Mattia, Ielmini, Daniele, Tortorelli, Innocenzo, Redaelli, Andrea, Pirovano, Agostino, Allegra, Mario, Magistretti, Michele, Bresolin, Camillo, Erbetta, Davide, Modelli, Alberto, Varesi, Enrico, Pellizzer, Fabio, Lacaita, Andrea L., Bez, Roberto

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Emerging memories von Baldi, Livio, Bez, Roberto, Sandhu, Gurtej

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Industrial exploitation of SiPM technology developed for basic research von Organtini, Paolo, Gola, Alberto, Paternoster, Giovanni, Acerbi, Fabio, Margutti, Giovanni, Bez, Roberto

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Introduction to flash memory von Bez, R., Camerlenghi, E., Modelli, A., Visconti, A.

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Electronic switching in phase-change memories von Pirovano, A., Lacaita, A.L., Benvenuti, A., Pellizzer, F., Bez, R.

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Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials von Pirovano, A., Lacaita, A.L., Pellizzer, F., Kostylev, S.A., Benvenuti, A., Bez, R.

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Innovative technologies for high density non-volatile semiconductor memories von Bez, Roberto

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Selected papers from ESSDERC 2014 von Bez, Roberto, Meneghesso, Gaudenzio, Pavan, Paolo, Zanoni, Enrico

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Flash memory cells-an overview von Pavan, P., Bez, R., Olivo, P., Zanoni, E.

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Emerging memory technology perspective von Bez, Roberto, Cappelletti, Paolo

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Analysis of phase distribution in phase-change nonvolatile memories von Ielmini, D., Lacaita, A.L., Pirovano, A., Pellizzer, F., Bez, R.

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A 4 Mb LV MOS-Selected Embedded Phase Change Memory in 90 nm Standard CMOS Technology von De Sandre, G, Bettini, L, Pirola, A, Marmonier, L, Pasotti, M, Borghi, M, Mattavelli, P, Zuliani, P, Scotti, L, Mastracchio, G, Bedeschi, F, Gastaldi, R, Bez, R

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Chalcogenide PCM: a memory technology for next decade von Bez, R.

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"Phase-Change Memories for nano-scale technology and design" von Pellizzer, F., Bez, R.

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Materials and Processes for Non-Volatile Memories von Pirovano, Agostino, Camerlenghi, Emilio, Bez, Roberto

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Materials and Processes for Non-Volatile Memories von Bez, Roberto, Camerlenghi, Emilio, Pirovano, Agostino

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4-Mb MOSFET-selected μtrench phase-change memory experimental chip von BEDESCHI, Ferdinando, BEZ, Roberto, OTTOGALLI, Federica, PELLIZZER, Fabio, PIROVANO, Agostino, RESTA, Claudio, TORELLI, Guido, TOSI, Marina, BOFFINO, Chiara, BONIZZONI, Edoardo, CASSIODORO BUDA, Egidio, CASAGRANDE, Giulio, COSTA, Lucio, FERRARO, Marco, GASTALDI, Roberto, KHOURI, Osama

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